Carrier lifetimes in a hetero N-I-P-I structure.

A. Kost, M. Kawase, E. Garmire, A. Danner, H. C. Lee, P. D. Dapkus

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


We discuss new studies of a multiple quantum well hetero n-i-p-i structure which combines the advantages of multiple quantum wells and doping superlattices. The structure exhibits large changes in its absorption coefficient for intensities of only a few mW/cm2. We have used the spectral dependence of the nonlinear absorption coefficient to deduce photogenerated carrier lifetimes as a function of intensity.

Original languageEnglish (US)
Pages (from-to)114-117
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - Aug 18 1988
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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