Carrier dynamics in quantum well lasers

A. Thränhardt; S. W. Koch; J. Hader; J. V. Moloney

doi:10.1007/s11082-006-0036-3

Carrier dynamics in quantum well lasers

A. Thränhardt, S. W. Koch, J. Hader, J. V. Moloney

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A fully microscopic theory is used to perform an analysis of carrier-carrier and carrier-LO phonon scattering in semiconductor quantum wells, focussing on the high-density case relevant for laser structures. A large variance of scattering times is observed depending on the material parameters, apparently contradicting popular belief in some cases. For instance, carrier-carrier scattering may slow down when the carrier density is increased. Electron-hole scattering times are found to be on the same order of magnitude as carrier-phonon scattering, making the introduction of a separate electron and hole temperature necessary. Heating by optical pumping is investigated and plasma cooling is shown to be possible by optical pumping of the laser structure.

Original language	English (US)
Pages (from-to)	361-368
Number of pages	8
Journal	Optical and Quantum Electronics
Volume	38
Issue number	4-6
DOIs	https://doi.org/10.1007/s11082-006-0036-3
State	Published - Mar 2006

Keywords

Carrier scattering
Dilute nitrides
Microscopic gain calculation
Nonequilibrium laser theory
Optical cooling
Quantum well lasers

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1007/s11082-006-0036-3

Cite this

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title = "Carrier dynamics in quantum well lasers",

abstract = "A fully microscopic theory is used to perform an analysis of carrier-carrier and carrier-LO phonon scattering in semiconductor quantum wells, focussing on the high-density case relevant for laser structures. A large variance of scattering times is observed depending on the material parameters, apparently contradicting popular belief in some cases. For instance, carrier-carrier scattering may slow down when the carrier density is increased. Electron-hole scattering times are found to be on the same order of magnitude as carrier-phonon scattering, making the introduction of a separate electron and hole temperature necessary. Heating by optical pumping is investigated and plasma cooling is shown to be possible by optical pumping of the laser structure.",

keywords = "Carrier scattering, Dilute nitrides, Microscopic gain calculation, Nonequilibrium laser theory, Optical cooling, Quantum well lasers",

author = "A. Thr{\"a}nhardt and Koch, {S. W.} and J. Hader and Moloney, {J. V.}",

note = "Funding Information: A.T. acknowledges helpful discussions with Claudia Ell. This work was supported by the Deutsche Forschungsgemeinschaft (Research Group on Metastable Compound Semiconductors and Heterostructures) and by AFOSR (F49620-02-1-0380).",

year = "2006",

month = mar,

doi = "10.1007/s11082-006-0036-3",

language = "English (US)",

volume = "38",

pages = "361--368",

journal = "Optical and Quantum Electronics",

issn = "0306-8919",

publisher = "Springer",

number = "4-6",

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TY - JOUR

T1 - Carrier dynamics in quantum well lasers

AU - Thränhardt, A.

AU - Koch, S. W.

AU - Hader, J.

AU - Moloney, J. V.

N1 - Funding Information: A.T. acknowledges helpful discussions with Claudia Ell. This work was supported by the Deutsche Forschungsgemeinschaft (Research Group on Metastable Compound Semiconductors and Heterostructures) and by AFOSR (F49620-02-1-0380).

PY - 2006/3

Y1 - 2006/3

N2 - A fully microscopic theory is used to perform an analysis of carrier-carrier and carrier-LO phonon scattering in semiconductor quantum wells, focussing on the high-density case relevant for laser structures. A large variance of scattering times is observed depending on the material parameters, apparently contradicting popular belief in some cases. For instance, carrier-carrier scattering may slow down when the carrier density is increased. Electron-hole scattering times are found to be on the same order of magnitude as carrier-phonon scattering, making the introduction of a separate electron and hole temperature necessary. Heating by optical pumping is investigated and plasma cooling is shown to be possible by optical pumping of the laser structure.

AB - A fully microscopic theory is used to perform an analysis of carrier-carrier and carrier-LO phonon scattering in semiconductor quantum wells, focussing on the high-density case relevant for laser structures. A large variance of scattering times is observed depending on the material parameters, apparently contradicting popular belief in some cases. For instance, carrier-carrier scattering may slow down when the carrier density is increased. Electron-hole scattering times are found to be on the same order of magnitude as carrier-phonon scattering, making the introduction of a separate electron and hole temperature necessary. Heating by optical pumping is investigated and plasma cooling is shown to be possible by optical pumping of the laser structure.

KW - Carrier scattering

KW - Dilute nitrides

KW - Microscopic gain calculation

KW - Nonequilibrium laser theory

KW - Optical cooling

KW - Quantum well lasers

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VL - 38

SP - 361

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JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

IS - 4-6

ER -

Carrier dynamics in quantum well lasers

Abstract

Keywords

ASJC Scopus subject areas

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