Abstract
A fully microscopic model is used to calculate the carrier capture times in quantum-well lasers operating at wavelengths in the 1.3 μm regime. The capture times are shown to be crucially dependent on the carrier confinement and therefore on the well and barrier materials. For a common well width of 6 nm the capture times in InP/InGaAlAs and InP/InGaAsP structures are found to be in the 5 ps range, whereas about a factor of ten longer times are predicted in GaInNAs/GaAs. By lowering the barriers using GaInNAs instead of pure GaAs or widening the well capture times similar to those in the InP-based structures can be obtained in the GaInNAs-based structure.
Original language | English (US) |
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Pages (from-to) | 287-292 |
Number of pages | 6 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 4646 |
DOIs | |
State | Published - 2002 |
Event | Physics and Simulation of Optoelectronic Devices X - San Jose, CA, United States Duration: Jan 21 2002 → Jan 25 2002 |
Keywords
- Carrier dynamics
- InGaAlAs
- InGaAsP
- Semiconductor laser
- Threshold GaInAs
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering