TY - JOUR
T1 - Bump bonded back illuminated ccds
AU - Lesser, M. P.
AU - Bauer, Ann
AU - Ulrickson, Lee
AU - Ouellette, David
N1 - Funding Information:
This work was partially supported by NSF SBIR grant 151-87860599, NASA SBIR grant 89-1-11-08. 13.8961, Lick Observatory, the University of Hawaii, the University of Arizona Foundation Small Grants Program, Steward Observatory, and the Multiple Mirror Telescope Observatory. We thank Richard Bredthauer and Paul Vu at Loral, John Gary at SAO, Lloyd Robinson at Lick Observatory , and Michael Demento and Gary Sims at Advanced Technologies for helpful discussions. The interferometer data was provided by Pat Woida and Trisha Crossman at Steward Observatory. The NOAO QE measurements were provided by Rich Reed and Todd Boroson.
Publisher Copyright:
© 1992 SPIE. All rights reserved.
PY - 1992/8/12
Y1 - 1992/8/12
N2 - We have developed a thinning and packaging process which allows the conversion of front-illuminated charge-coupled devices (CCDs) into back illuminated sensors. This process does not depend on any special processing by the manufacturer and can therefore be used with any type of CCD. The process consists of several major steps which include: 1) making a silicon substrate with conductive traces and indium bumps which mate to the CCD wire bonding pads, 2) placing indium bumps on the CCD wire bonding pads, 3) bump bonding the substrate and CCD together, 4) thinning, 5)packaging, 6) oxidizing the backside surface, 7) applying antireflection coatings, and 8) backside charging. Using this process with Loral 1200x800 and 3072x1024 CCDs, we have produced devices with quantum efficiency in excess of 80% in the near-UV and visible wavelength regions. The surface flatness of these devices has been measured interferometrically to deviate from a plane by less than 1 um rms for the 1200x800 pixel sensors.
AB - We have developed a thinning and packaging process which allows the conversion of front-illuminated charge-coupled devices (CCDs) into back illuminated sensors. This process does not depend on any special processing by the manufacturer and can therefore be used with any type of CCD. The process consists of several major steps which include: 1) making a silicon substrate with conductive traces and indium bumps which mate to the CCD wire bonding pads, 2) placing indium bumps on the CCD wire bonding pads, 3) bump bonding the substrate and CCD together, 4) thinning, 5)packaging, 6) oxidizing the backside surface, 7) applying antireflection coatings, and 8) backside charging. Using this process with Loral 1200x800 and 3072x1024 CCDs, we have produced devices with quantum efficiency in excess of 80% in the near-UV and visible wavelength regions. The surface flatness of these devices has been measured interferometrically to deviate from a plane by less than 1 um rms for the 1200x800 pixel sensors.
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U2 - 10.1117/12.135929
DO - 10.1117/12.135929
M3 - Conference article
AN - SCOPUS:3943068642
SN - 0277-786X
VL - 1656
SP - 508
EP - 516
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
T2 - High-Resolution Sensors and Hybrid Systems 1992
Y2 - 9 February 1992 through 14 February 1992
ER -