Behaviors of metallic contaminants in Si wafer processing

Joong S. Jeon, Stefan De Gandt, Srini Raghavan, Marcia Almanza-Workman, Cynthia Gonsalves, Bob Ogle

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations


It was found that the levels of metallic contamination depend on the pH of solutions. The contamination levels of Co and Ni in SC2 are significantly lower than those in SC 1 solutions. It was also found that metallic contaminants on Si surface diffuse into bulk or oxide during oxidation. For Fe and Co contaminated wafers, decreases in lifetimes were found, and they depend on contamination levels. On the other hand, for Ti and Ni wafers, lifetimes were not different from that for uncontaminated wafer. Interestingly, Fe influenced bulk lifetime rather than near surface lifetimes, while Ni and Co affected near surface lifetime.

Original languageEnglish (US)
Title of host publicationUltra Clean Processing of Silicon Surfaces 2000
EditorsMarc Heyns, Paul Mertens, Marc Meuris
PublisherTrans Tech Publications Ltd
Number of pages4
ISBN (Print)9783908450573
StatePublished - 2001
Event5th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 2000 - Ostend, Belgium
Duration: Sep 18 2000Sep 20 2000

Publication series

NameSolid State Phenomena
ISSN (Print)1012-0394
ISSN (Electronic)1662-9779


Other5th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 2000


  • Co
  • Contamination
  • Fe
  • Lifetime
  • Metal
  • Ni
  • Oxide
  • Ti

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics


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