@inproceedings{be5da84176074f76ba6b3a367d69281c,
title = "Behaviors of metallic contaminants in Si wafer processing",
abstract = "It was found that the levels of metallic contamination depend on the pH of solutions. The contamination levels of Co and Ni in SC2 are significantly lower than those in SC 1 solutions. It was also found that metallic contaminants on Si surface diffuse into bulk or oxide during oxidation. For Fe and Co contaminated wafers, decreases in lifetimes were found, and they depend on contamination levels. On the other hand, for Ti and Ni wafers, lifetimes were not different from that for uncontaminated wafer. Interestingly, Fe influenced bulk lifetime rather than near surface lifetimes, while Ni and Co affected near surface lifetime.",
keywords = "Co, Contamination, Fe, Lifetime, Metal, Ni, Oxide, Ti",
author = "Jeon, {Joong S.} and {De Gandt}, Stefan and Srini Raghavan and Marcia Almanza-Workman and Cynthia Gonsalves and Bob Ogle",
note = "Publisher Copyright: {\textcopyright} (2001) Trans Tech Publications, Switzerland.; 5th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 2000 ; Conference date: 18-09-2000 Through 20-09-2000",
year = "2001",
doi = "10.4028/www.scientific.net/SSP.76-77.123",
language = "English (US)",
isbn = "9783908450573",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
pages = "123--126",
editor = "Marc Heyns and Paul Mertens and Marc Meuris",
booktitle = "Ultra Clean Processing of Silicon Surfaces 2000",
}