Abstract
It was found that the levels of metallic contamination depend on the pH of solutions. The contamination levels of Co and Ni in SC2 are significantly lower than those in SC1 solutions. It was also found that metallic contaminants on Si surface diffuse into bulk or oxide during oxidation. For Fe and Co contaminated wafers, decreases in lifetimes were found, and they depend on contamination levels. On the other hand, for Ti and Ni wafers, lifetimes were not different from that for uncontaminated wafer. Interestingly, Fe influenced bulk lifetime rather than near surface lifetimes, while Ni and Co affected near surface lifetime.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 123-126 |
| Number of pages | 4 |
| Journal | Diffusion and Defect Data Pt.B: Solid State Phenomena |
| Volume | 76-77 |
| State | Published - 2000 |
| Event | 5th Internatinal Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2000) - Ostend, Belgium Duration: Sep 18 2000 → Sep 20 2000 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- General Materials Science
- Condensed Matter Physics
- Physics and Astronomy (miscellaneous)