Behavior of Polyethylene Oxide Based Nonionic Surfactants in Silicon Processing Using Alkaline Solutions

Joong S. Jeon; Srini Raghavan; Roger P. Sperline

doi:10.1149/1.2044111

Behavior of Polyethylene Oxide Based Nonionic Surfactants in Silicon Processing Using Alkaline Solutions

Joong S. Jeon, Srini Raghavan, Roger P. Sperline

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

The adsorption of polyethylene oxide (PEO) based nonionic surfactants onto hydrophobic silicon from an alkaline solution was investigated using an in situ attenuated total reflection Fourier transform infrared spectroscopy technique. The adsorption/desorption profiles of surfactants were affected by the type and length of the hydrophobic group and the lengths of hydrophilic PEO chains. Complete wetting of hydrophobic silicon was measured at surfactant concentrations in the range of 50 to 200 ppm. Surfactant adsorption was controlled by hydrophobic attractions between the hydrophobic moiety of surfactant and the silicon surface. The addition of surfactant to alkaline solutions dramatically reduced the etch rate of silicon and resulted in a smoother silicon surface. Oxidizing treatments followed by buffered oxide etching (BOE) were effective in the complete removal of adsorbed surfactant.

Original language	English (US)
Pages (from-to)	621-627
Number of pages	7
Journal	Journal of the Electrochemical Society
Volume	142
Issue number	2
DOIs	https://doi.org/10.1149/1.2044111
State	Published - Feb 1995
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrochemistry
Renewable Energy, Sustainability and the Environment

Access to Document

10.1149/1.2044111

Cite this

@article{5a8b2968f704470f84e16e0bd0ce4801,

title = "Behavior of Polyethylene Oxide Based Nonionic Surfactants in Silicon Processing Using Alkaline Solutions",

abstract = "The adsorption of polyethylene oxide (PEO) based nonionic surfactants onto hydrophobic silicon from an alkaline solution was investigated using an in situ attenuated total reflection Fourier transform infrared spectroscopy technique. The adsorption/desorption profiles of surfactants were affected by the type and length of the hydrophobic group and the lengths of hydrophilic PEO chains. Complete wetting of hydrophobic silicon was measured at surfactant concentrations in the range of 50 to 200 ppm. Surfactant adsorption was controlled by hydrophobic attractions between the hydrophobic moiety of surfactant and the silicon surface. The addition of surfactant to alkaline solutions dramatically reduced the etch rate of silicon and resulted in a smoother silicon surface. Oxidizing treatments followed by buffered oxide etching (BOE) were effective in the complete removal of adsorbed surfactant.",

author = "Jeon, {Joong S.} and Srini Raghavan and Sperline, {Roger P.}",

year = "1995",

month = feb,

doi = "10.1149/1.2044111",

language = "English (US)",

volume = "142",

pages = "621--627",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Behavior of Polyethylene Oxide Based Nonionic Surfactants in Silicon Processing Using Alkaline Solutions

AU - Jeon, Joong S.

AU - Raghavan, Srini

AU - Sperline, Roger P.

PY - 1995/2

Y1 - 1995/2

N2 - The adsorption of polyethylene oxide (PEO) based nonionic surfactants onto hydrophobic silicon from an alkaline solution was investigated using an in situ attenuated total reflection Fourier transform infrared spectroscopy technique. The adsorption/desorption profiles of surfactants were affected by the type and length of the hydrophobic group and the lengths of hydrophilic PEO chains. Complete wetting of hydrophobic silicon was measured at surfactant concentrations in the range of 50 to 200 ppm. Surfactant adsorption was controlled by hydrophobic attractions between the hydrophobic moiety of surfactant and the silicon surface. The addition of surfactant to alkaline solutions dramatically reduced the etch rate of silicon and resulted in a smoother silicon surface. Oxidizing treatments followed by buffered oxide etching (BOE) were effective in the complete removal of adsorbed surfactant.

AB - The adsorption of polyethylene oxide (PEO) based nonionic surfactants onto hydrophobic silicon from an alkaline solution was investigated using an in situ attenuated total reflection Fourier transform infrared spectroscopy technique. The adsorption/desorption profiles of surfactants were affected by the type and length of the hydrophobic group and the lengths of hydrophilic PEO chains. Complete wetting of hydrophobic silicon was measured at surfactant concentrations in the range of 50 to 200 ppm. Surfactant adsorption was controlled by hydrophobic attractions between the hydrophobic moiety of surfactant and the silicon surface. The addition of surfactant to alkaline solutions dramatically reduced the etch rate of silicon and resulted in a smoother silicon surface. Oxidizing treatments followed by buffered oxide etching (BOE) were effective in the complete removal of adsorbed surfactant.

UR - http://www.scopus.com/inward/record.url?scp=0029254644&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029254644&partnerID=8YFLogxK

U2 - 10.1149/1.2044111

DO - 10.1149/1.2044111

M3 - Article

AN - SCOPUS:0029254644

SN - 0013-4651

VL - 142

SP - 621

EP - 627

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 2

ER -

Behavior of Polyethylene Oxide Based Nonionic Surfactants in Silicon Processing Using Alkaline Solutions

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this