Behavior of GeSbTeBi phase-change optical recording media under sub-nanosecond pulsed laser irradiation

Kazuo Watabe; Pavel Polynkin; Masud Mansuripur

doi:10.1117/12.557067

Behavior of GeSbTeBi phase-change optical recording media under sub-nanosecond pulsed laser irradiation

Kazuo Watabe, Pavel Polynkin, Masud Mansuripur

Research output: Contribution to journal › Conference article › peer-review

Abstract

Reflectivity variations during phase-transition between amorphous and crystalline states of a Bi-doped GeTe-Sb₂Te₃ pseudo-binary compound film is investigated with sub-nanosecond laser pulses using a pump-and-probe technique. We also use a two-laser static tester to estimate the onset time of crystallization under a 2.0-μs-pulse excitation. Experimental results indicate that the formation of a melt-quenched amorphous mark is completed in about one nanosecond, but crystalline mark formation on an as-deposited amorphous region requires several hundred nanoseconds. Simple arguments based on heat diffusion are used to explain the time scale of amorphization and the threshold for creation of a burned-out hole on the phase-change film.

Original language	English (US)
Pages (from-to)	342-350
Number of pages	9
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5380
DOIs	https://doi.org/10.1117/12.557067
State	Published - 2004
Event	Optical Data Storage 2004 - Monterey, CA, United States Duration: Apr 18 2004 → Apr 21 2004

Keywords

Amorphization
Crystallization
Phase-change recording
Pump and probe technique
Sub-nanosecond

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.557067

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title = "Behavior of GeSbTeBi phase-change optical recording media under sub-nanosecond pulsed laser irradiation",

abstract = "Reflectivity variations during phase-transition between amorphous and crystalline states of a Bi-doped GeTe-Sb2Te3 pseudo-binary compound film is investigated with sub-nanosecond laser pulses using a pump-and-probe technique. We also use a two-laser static tester to estimate the onset time of crystallization under a 2.0-μs-pulse excitation. Experimental results indicate that the formation of a melt-quenched amorphous mark is completed in about one nanosecond, but crystalline mark formation on an as-deposited amorphous region requires several hundred nanoseconds. Simple arguments based on heat diffusion are used to explain the time scale of amorphization and the threshold for creation of a burned-out hole on the phase-change film.",

keywords = "Amorphization, Crystallization, Phase-change recording, Pump and probe technique, Sub-nanosecond",

author = "Kazuo Watabe and Pavel Polynkin and Masud Mansuripur",

year = "2004",

doi = "10.1117/12.557067",

language = "English (US)",

volume = "5380",

pages = "342--350",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Optical Data Storage 2004 ; Conference date: 18-04-2004 Through 21-04-2004",

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TY - JOUR

T1 - Behavior of GeSbTeBi phase-change optical recording media under sub-nanosecond pulsed laser irradiation

AU - Watabe, Kazuo

AU - Polynkin, Pavel

AU - Mansuripur, Masud

PY - 2004

Y1 - 2004

N2 - Reflectivity variations during phase-transition between amorphous and crystalline states of a Bi-doped GeTe-Sb2Te3 pseudo-binary compound film is investigated with sub-nanosecond laser pulses using a pump-and-probe technique. We also use a two-laser static tester to estimate the onset time of crystallization under a 2.0-μs-pulse excitation. Experimental results indicate that the formation of a melt-quenched amorphous mark is completed in about one nanosecond, but crystalline mark formation on an as-deposited amorphous region requires several hundred nanoseconds. Simple arguments based on heat diffusion are used to explain the time scale of amorphization and the threshold for creation of a burned-out hole on the phase-change film.

AB - Reflectivity variations during phase-transition between amorphous and crystalline states of a Bi-doped GeTe-Sb2Te3 pseudo-binary compound film is investigated with sub-nanosecond laser pulses using a pump-and-probe technique. We also use a two-laser static tester to estimate the onset time of crystallization under a 2.0-μs-pulse excitation. Experimental results indicate that the formation of a melt-quenched amorphous mark is completed in about one nanosecond, but crystalline mark formation on an as-deposited amorphous region requires several hundred nanoseconds. Simple arguments based on heat diffusion are used to explain the time scale of amorphization and the threshold for creation of a burned-out hole on the phase-change film.

KW - Amorphization

KW - Crystallization

KW - Phase-change recording

KW - Pump and probe technique

KW - Sub-nanosecond

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DO - 10.1117/12.557067

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VL - 5380

SP - 342

EP - 350

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Optical Data Storage 2004

Y2 - 18 April 2004 through 21 April 2004

ER -

Behavior of GeSbTeBi phase-change optical recording media under sub-nanosecond pulsed laser irradiation

Abstract

Keywords

ASJC Scopus subject areas

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