Band offset in (Ga, In)As/Ga(As, Sb) heterostructures

S. Gies; M. J. Weseloh; C. Fuchs; W. Stolz; J. Hader; J. V. Moloney; S. W. Koch; W. Heimbrodt

doi:10.1063/1.4968541

Band offset in (Ga, In)As/Ga(As, Sb) heterostructures

S. Gies
, M. J. Weseloh
, C. Fuchs
, W. Stolz
, J. Hader
, J. V. Moloney
, S. W. Koch
, W. Heimbrodt

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A series of (Ga, In)As/GaAs/Ga(As, Sb) multi-quantum well heterostructures is analyzed using temperature- and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the kp method. This theory-experiment comparison reveals an unusual, temperature dependent variation of the band alignment between the (Ga, In)As and Ga(As, Sb) quantum wells.

Original language	English (US)
Article number	204303
Journal	Journal of Applied Physics
Volume	120
Issue number	20
DOIs	https://doi.org/10.1063/1.4968541
State	Published - Nov 28 2016

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Physics and Astronomy (miscellaneous)
General Physics and Astronomy

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10.1063/1.4968541

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@article{356272d087bf4c5993bde289cf5193db,

title = "Band offset in (Ga, In)As/Ga(As, Sb) heterostructures",

abstract = "A series of (Ga, In)As/GaAs/Ga(As, Sb) multi-quantum well heterostructures is analyzed using temperature- and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the kp method. This theory-experiment comparison reveals an unusual, temperature dependent variation of the band alignment between the (Ga, In)As and Ga(As, Sb) quantum wells.",

author = "S. Gies and Weseloh, \{M. J.\} and C. Fuchs and W. Stolz and J. Hader and Moloney, \{J. V.\} and Koch, \{S. W.\} and W. Heimbrodt",

note = "Publisher Copyright: {\textcopyright} 2016 Author(s).",

year = "2016",

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doi = "10.1063/1.4968541",

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volume = "120",

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T1 - Band offset in (Ga, In)As/Ga(As, Sb) heterostructures

AU - Gies, S.

AU - Weseloh, M. J.

AU - Fuchs, C.

AU - Stolz, W.

AU - Hader, J.

AU - Moloney, J. V.

AU - Koch, S. W.

AU - Heimbrodt, W.

PY - 2016/11/28

Y1 - 2016/11/28

N2 - A series of (Ga, In)As/GaAs/Ga(As, Sb) multi-quantum well heterostructures is analyzed using temperature- and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the kp method. This theory-experiment comparison reveals an unusual, temperature dependent variation of the band alignment between the (Ga, In)As and Ga(As, Sb) quantum wells.

AB - A series of (Ga, In)As/GaAs/Ga(As, Sb) multi-quantum well heterostructures is analyzed using temperature- and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the kp method. This theory-experiment comparison reveals an unusual, temperature dependent variation of the band alignment between the (Ga, In)As and Ga(As, Sb) quantum wells.

UR - https://www.scopus.com/pages/publications/84999791306

UR - https://www.scopus.com/pages/publications/84999791306#tab=citedBy

U2 - 10.1063/1.4968541

DO - 10.1063/1.4968541

M3 - Article

AN - SCOPUS:84999791306

SN - 0021-8979

VL - 120

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 20

M1 - 204303

ER -

Band offset in (Ga, In)As/Ga(As, Sb) heterostructures

Abstract

ASJC Scopus subject areas

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