Band-engineered Ge as gain medium for Si-based laser

Xiaochen Sun, Jifeng Liu, Lionel C. Kimerling, Jurgen Michel, Thomas L. Koch

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


Optical gain and net material gain via direct bandgap transition at around 1550nm of the tensilestrain band-engineered n-type Ge has been analyzed. Photoluminescence spectra measured at room temperature confirm the theoretical predictions.

Original languageEnglish (US)
JournalOptics InfoBase Conference Papers
StatePublished - 2008
EventIntegrated Photonics and Nanophotonics Research and Applications, IPNRA 2008 - Boston, MA, United States
Duration: Jul 13 2008Jul 16 2008

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics


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