Band-edge absorption coefficients from photoluminescence in semiconductor multiple quantum wells

Alan Kost; H. C. Lee; Yao Zou; P. D. Dapkus; Elsa Garmire

doi:10.1063/1.100714

Band-edge absorption coefficients from photoluminescence in semiconductor multiple quantum wells

Alan Kost, H. C. Lee, Yao Zou, P. D. Dapkus, Elsa Garmire

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We describe a novel approach to determining absorption coefficients in thin films using luminescence. The technique avoids many of the difficulties typically encountered in measurements of thin samples, Fabry-Perot effects, for example, and can be applied to a variety of materials. We examine the absorption edge for GaAs/AlGaAs multiple quantum well structures with quantum well widths ranging from 54 to 193 Å. Urbach parameters and excitonic linewidths are tabulated.

Original language	English (US)
Pages (from-to)	1356-1358
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	14
DOIs	https://doi.org/10.1063/1.100714
State	Published - 1989
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.100714

Cite this

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title = "Band-edge absorption coefficients from photoluminescence in semiconductor multiple quantum wells",

abstract = "We describe a novel approach to determining absorption coefficients in thin films using luminescence. The technique avoids many of the difficulties typically encountered in measurements of thin samples, Fabry-Perot effects, for example, and can be applied to a variety of materials. We examine the absorption edge for GaAs/AlGaAs multiple quantum well structures with quantum well widths ranging from 54 to 193 {\AA}. Urbach parameters and excitonic linewidths are tabulated.",

author = "Alan Kost and Lee, {H. C.} and Yao Zou and Dapkus, {P. D.} and Elsa Garmire",

year = "1989",

doi = "10.1063/1.100714",

language = "English (US)",

volume = "54",

pages = "1356--1358",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Band-edge absorption coefficients from photoluminescence in semiconductor multiple quantum wells

AU - Kost, Alan

AU - Lee, H. C.

AU - Zou, Yao

AU - Dapkus, P. D.

AU - Garmire, Elsa

PY - 1989

Y1 - 1989

N2 - We describe a novel approach to determining absorption coefficients in thin films using luminescence. The technique avoids many of the difficulties typically encountered in measurements of thin samples, Fabry-Perot effects, for example, and can be applied to a variety of materials. We examine the absorption edge for GaAs/AlGaAs multiple quantum well structures with quantum well widths ranging from 54 to 193 Å. Urbach parameters and excitonic linewidths are tabulated.

AB - We describe a novel approach to determining absorption coefficients in thin films using luminescence. The technique avoids many of the difficulties typically encountered in measurements of thin samples, Fabry-Perot effects, for example, and can be applied to a variety of materials. We examine the absorption edge for GaAs/AlGaAs multiple quantum well structures with quantum well widths ranging from 54 to 193 Å. Urbach parameters and excitonic linewidths are tabulated.

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DO - 10.1063/1.100714

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JF - Applied Physics Letters

IS - 14

ER -

Band-edge absorption coefficients from photoluminescence in semiconductor multiple quantum wells

Abstract

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