Abstract
The optimization ofback illuminated CCDs for low-light-level applications requires many process steps. One such step is the deposition ofthin films on the freshly thinned backside surface. These films may consist of many layers depending on both the desired properties of the detector and on the backside charging mechanism. We describe our backside coating process which has been optimized for astronomical applications. After thinning, we first grow a thin silicon oxide film in a steam environment. Following oxidation we deposit an antireflection coating optimized for a particular wavelength. We may also deposit a thin film ofplatinum between these layers that acts to charge the backside. Using these thin film coatings we have been able to produce CCDs which reach silicon's theoretical maximum quantum efficiency over the 300 - 1000 nm wavelength region.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 219-227 |
| Number of pages | 9 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 1900 |
| DOIs | |
| State | Published - Jul 12 1993 |
| Event | Charge-Coupled Devices and Solid State Optical Sensors III 1993 - San Jose, United States Duration: Jan 31 1993 → Feb 5 1993 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering