TY - JOUR
T1 - Backside Coatings for Back illuminated CCDs
AU - Lesser, M. P.
N1 - Funding Information:
This work was partially supported by NSF SBIR grant 151-87860599, NASA SBIR grant NAS5-30870 (both the Photometrics/Advanced Technologies), NSF Grant AST-912 1801, Steward Observatory, and the Multiple Mirror Telescope Observatory. We wish to thank Ann Bauer, Charles Bridges, Lee Ulrickson of Steward Observatory and David Ouellette of the Multiple Mirror Telescope Observatory who did much of the laboratory work.
Funding Information:
This work was partially supported by NSF SBIR grant 151-87860599, NASA SBIR grant NAS5-30870 (both the Photometrics/Advanced Technologies), NSF Grant AST-912 1801, Steward Observatory, and the Multiple Mirror Telescope Observatory. We wish to thank Ann Bauer, Charles Bridges, Lee Ulrickson of Steward Observatory and David Ouellette of the Multiple Mirror Telescope Observatory who did much of the laboratory work
Publisher Copyright:
© 1993 SPIE. All rights reserved.
PY - 1993/7/12
Y1 - 1993/7/12
N2 - The optimization ofback illuminated CCDs for low-light-level applications requires many process steps. One such step is the deposition ofthin films on the freshly thinned backside surface. These films may consist of many layers depending on both the desired properties of the detector and on the backside charging mechanism. We describe our backside coating process which has been optimized for astronomical applications. After thinning, we first grow a thin silicon oxide film in a steam environment. Following oxidation we deposit an antireflection coating optimized for a particular wavelength. We may also deposit a thin film ofplatinum between these layers that acts to charge the backside. Using these thin film coatings we have been able to produce CCDs which reach silicon's theoretical maximum quantum efficiency over the 300 - 1000 nm wavelength region.
AB - The optimization ofback illuminated CCDs for low-light-level applications requires many process steps. One such step is the deposition ofthin films on the freshly thinned backside surface. These films may consist of many layers depending on both the desired properties of the detector and on the backside charging mechanism. We describe our backside coating process which has been optimized for astronomical applications. After thinning, we first grow a thin silicon oxide film in a steam environment. Following oxidation we deposit an antireflection coating optimized for a particular wavelength. We may also deposit a thin film ofplatinum between these layers that acts to charge the backside. Using these thin film coatings we have been able to produce CCDs which reach silicon's theoretical maximum quantum efficiency over the 300 - 1000 nm wavelength region.
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U2 - 10.1117/12.148600
DO - 10.1117/12.148600
M3 - Conference article
AN - SCOPUS:85075843612
VL - 1900
SP - 219
EP - 227
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
SN - 0277-786X
T2 - Charge-Coupled Devices and Solid State Optical Sensors III 1993
Y2 - 31 January 1993 through 5 February 1993
ER -