Atomically precise surface engineering of silicon CCDs for enhanced UV quantum efficiency

Frank Greer, Erika Hamden, Blake C. Jacquot, Michael E. Hoenk, Todd J. Jones, Matthew R. Dickie, Steve P. Monacos, Shouleh Nikzad

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


The authors report here on a new technique, combining the atomic precision of molecular beam epitaxy and atomic layer deposition, to fabricate back illuminated silicon CCD detectors that demonstrate world record detector quantum efficiency (>50%) in the near and far ultraviolet (155-300 nm). This report describes in detail the unique surface engineering approaches used and demonstrates the robustness of detector performance that is obtained by achieving atomic level precision at key steps in the fabrication process. The characterization, materials, and devices produced in this effort will be presented along with comparison to other approaches.

Original languageEnglish (US)
Article number01A103
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number1
StatePublished - Jan 2013

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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