@inproceedings{2183ec74c89245458360e50c46a4ef36,
title = "Atomic layer deposition of tin below 600 k using n2h4",
abstract = "Atomic layer deposition (ALD) was used to grow titanium nitride (TiN) on SiO2 with TiCl4 and N2 H4. X-ray photoelectron spectroscopy (XPS) and ellipsometry were used to characterize film growth. A hydrogen-terminated Si (Si-H) surface was used as a reference to understand the reaction steps on SPM cleaned SiO2. The growth rate of TiN at 573 K doubled on Si-H compared to SiO2 because of the formation of Si-N bonds. When the temperature was raised to 623 K, O transferred from Ti to Si to form Si-N when exposed to N2 H4. Oxygen and Ti could be removed at 623 K by TiCl4 producing volatile species. The added surface reactions reduce the Cl in the film below detection limits.",
keywords = "Atomic Layer Deposition, Barrier Layer, Hydrazine, Titanium nitride",
author = "Adam Hinckley and Anthony Muscat",
note = "Funding Information: The authors would like to thank Lam Research for financial support of this research. The authors would like to thank RASIRC, Inc. for their support. Publisher Copyright: {\textcopyright} 2018 Trans Tech Publications, Switzerland.; 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 ; Conference date: 03-09-2018 Through 05-09-2018",
year = "2018",
doi = "10.4028/www.scientific.net/SSP.282.232",
language = "English (US)",
isbn = "9783035714173",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
pages = "232--237",
editor = "Paul Mertens and Marc Meuris and Marc Meuris and Marc Heyns",
booktitle = "Ultra Clean Processing of Semiconductor Surfaces XIV",
}