TY - JOUR
T1 - Applications of Raman spectroscopy in copper chemical mechanical planarization
T2 - In situ detection of tantalum layer to dielectric layer transition
AU - Kondoju, S.
AU - Juncker, C.
AU - Lucas, P.
AU - Raghavan, S.
AU - Fischer, P.
AU - Oehler, A.
AU - Moinpour, M.
N1 - Funding Information:
This work was sponsored by a grant from Intel Corp., Portland, OR. We would like to thank Dr. You-Fan Liu of Sematech and Dr. Paul Fischer of Intel for providing wafers and Doug Johnson of Rohm and Haas for providing samples of IC-1000 pads. We also would like to extend our thanks to Professor Simmons of the University of Arizona for allowing us to use the Raman spectrometer.
PY - 2006
Y1 - 2006
N2 - In metal chemical mechanical planarization, in situ detection of barrier to dielectric layer transition is typically done using reflectivity measurements. Introduction of carbon containing low-dielectric constant (k) materials, commonly known as carbon doped oxides (CDOs), as dielectric layers has opened up the possibility of using spectroscopic techniques for detecting such transition. The vibrational frequencies of the bonds between C, H, O, and Si in these low-fc materials may be readily detected by spectroscopic techniques such as Raman and infrared spectroscopies. In this work, the use of Raman spectroscopy in detecting the transition from Ta layer to a CDO layer has been explored. An abrasion cell integrated with a Raman spectrometer was used to make the measurements. The sensitivity of the Raman technique is compared with that of the conventional reflectivity technique.
AB - In metal chemical mechanical planarization, in situ detection of barrier to dielectric layer transition is typically done using reflectivity measurements. Introduction of carbon containing low-dielectric constant (k) materials, commonly known as carbon doped oxides (CDOs), as dielectric layers has opened up the possibility of using spectroscopic techniques for detecting such transition. The vibrational frequencies of the bonds between C, H, O, and Si in these low-fc materials may be readily detected by spectroscopic techniques such as Raman and infrared spectroscopies. In this work, the use of Raman spectroscopy in detecting the transition from Ta layer to a CDO layer has been explored. An abrasion cell integrated with a Raman spectrometer was used to make the measurements. The sensitivity of the Raman technique is compared with that of the conventional reflectivity technique.
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U2 - 10.1063/1.2212087
DO - 10.1063/1.2212087
M3 - Article
AN - SCOPUS:33746210321
SN - 0021-8979
VL - 100
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 1
M1 - 014907
ER -