Abstract
Though germanium (Ge) shares similar physical properties with silicon (Si), it also possesses unique characteristics that are complementary to those of Si. The advantages of Ge include its compatibility with Si micro-fabrication, its excellent gas and liquid phase etch selectivity to other materials commonly used in Si micro-machining, and particularly its low deposition temperature (<350 °C) which allows Ge to be used after the completion of a standard CMOS run. Clearly, wider applications of Ge as structural, sacrificial, and sensor material require a more systematic investigation of its processing and properties. In this report, the results of a systematic investigation of the use of Ge in MEMS are presented.
| Original language | English (US) |
|---|---|
| Pages | 638-643 |
| Number of pages | 6 |
| State | Published - 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1999 12th IEEE International Conference on Micro Electro Mechanical Systems, MEMS - Orlando, FL, USA Duration: Jan 17 1999 → Jan 21 1999 |
Other
| Other | Proceedings of the 1999 12th IEEE International Conference on Micro Electro Mechanical Systems, MEMS |
|---|---|
| City | Orlando, FL, USA |
| Period | 1/17/99 → 1/21/99 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Mechanical Engineering
- Electrical and Electronic Engineering