Anomalous behavior of excitons at light holes in strained (In, Ga)As/GaAs heterostructures

Kh Moumanis; R. P. Seǐsyan; M. É Sasin; A. V. Kavokin; S. I. Kokhanovskiǐ; H. M. Gibbs; G. Khitrova

doi:10.1134/1.1130433

Anomalous behavior of excitons at light holes in strained (In, Ga)As/GaAs heterostructures

Kh Moumanis, R. P. Seǐsyan, M. É Sasin, A. V. Kavokin, S. I. Kokhanovskiǐ, H. M. Gibbs, G. Khitrova

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Additional localization of holes due to Coulomb attraction to the electron located in a quantum well is important for light-hole excitons in the heterostructure (In, Ga)As/GaAs. The fine structure of the optical and magneto-optical spectra of these quantum wells is examined in detail with the formation of a "Coulomb well" and deformations taken into account.

Original language	English (US)
Pages (from-to)	731-733
Number of pages	3
Journal	Physics of the Solid State
Volume	40
Issue number	5
DOIs	https://doi.org/10.1134/1.1130433
State	Published - May 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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@article{cdea23cfd3074d33837757bec7744235,

title = "Anomalous behavior of excitons at light holes in strained (In, Ga)As/GaAs heterostructures",

abstract = "Additional localization of holes due to Coulomb attraction to the electron located in a quantum well is important for light-hole excitons in the heterostructure (In, Ga)As/GaAs. The fine structure of the optical and magneto-optical spectra of these quantum wells is examined in detail with the formation of a {"}Coulomb well{"} and deformations taken into account.",

author = "Kh Moumanis and Seǐsyan, {R. P.} and Sasin, {M. {\'E}} and Kavokin, {A. V.} and Kokhanovskiǐ, {S. I.} and Gibbs, {H. M.} and G. Khitrova",

note = "Funding Information: This work was supported by grants No. 1–020/2 and 1–080/4 of the GNTP.",

year = "1998",

month = may,

doi = "10.1134/1.1130433",

language = "English (US)",

volume = "40",

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journal = "Physics of the Solid State",

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T1 - Anomalous behavior of excitons at light holes in strained (In, Ga)As/GaAs heterostructures

AU - Moumanis, Kh

AU - Seǐsyan, R. P.

AU - Sasin, M. É

AU - Kavokin, A. V.

AU - Kokhanovskiǐ, S. I.

AU - Gibbs, H. M.

AU - Khitrova, G.

N1 - Funding Information: This work was supported by grants No. 1–020/2 and 1–080/4 of the GNTP.

PY - 1998/5

Y1 - 1998/5

N2 - Additional localization of holes due to Coulomb attraction to the electron located in a quantum well is important for light-hole excitons in the heterostructure (In, Ga)As/GaAs. The fine structure of the optical and magneto-optical spectra of these quantum wells is examined in detail with the formation of a "Coulomb well" and deformations taken into account.

AB - Additional localization of holes due to Coulomb attraction to the electron located in a quantum well is important for light-hole excitons in the heterostructure (In, Ga)As/GaAs. The fine structure of the optical and magneto-optical spectra of these quantum wells is examined in detail with the formation of a "Coulomb well" and deformations taken into account.

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DO - 10.1134/1.1130433

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AN - SCOPUS:0347810219

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JO - Physics of the Solid State

JF - Physics of the Solid State

IS - 5

ER -

Anomalous behavior of excitons at light holes in strained (In, Ga)As/GaAs heterostructures

Abstract

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