Annealing Studies of Nanoporous Si Thin Films Fabricated by Dry Etch

Qing Hao, Yue Xiao, Fabian Javier Medina

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


In this work, high-temperature annealing above 1073 K has been carried out to study the possible shape change of nanoporous Si thin films. Under 1273 K, it is found that the pore size can still be largely maintained when the nanoporous Si thin film is on a SiO /Si substrate. 2 However, the pore size can significantly shrink when the film is suspended. The contrast suggests that the SiO /Si substrate can play an 2 important role in maintaining the nanoporous patterns at a high temperature. This finding can be important for the high-temperature applications of these porous thin films, such as thermoelectric power generation.

Original languageEnglish (US)
Pages (from-to)24-27
Number of pages4
JournalES Materials and Manufacturing
StatePublished - Dec 2019


  • Deep reactive ion etching
  • High temperature
  • Nanoporous material

ASJC Scopus subject areas

  • Building and Construction
  • Ceramics and Composites
  • Metals and Alloys
  • Polymers and Plastics
  • Applied Mathematics
  • Modeling and Simulation
  • Numerical Analysis


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