Annealing effects on multi-quantum well laser diodes after proton irradiation

Y. F. Zhao; R. D. Schrimpf; A. R. Patwary; M. A. Neifeld; A. W. Al-Johani; R. A. Weller; K. F. Galloway

doi:10.1109/23.736535

Annealing effects on multi-quantum well laser diodes after proton irradiation

Y. F. Zhao
, R. D. Schrimpf
, A. R. Patwary
, M. A. Neifeld
, A. W. Al-Johani
, R. A. Weller
, K. F. Galloway

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

The threshold current of multi-quantum well laser diodes increased by about 1. 5 mA at a proton fluence of 6xl012 p/cm2. It recovered gradually due to forward-bias annealing at Ibias = 35 mA and became about 0. 8mA less than before irradiation after 86 h of forward bias annealing. At the same time, the optical power at a given bias became greater than before irradiation. There is a fast recovery during the first 100 s after proton irradiation. Increasing the forward bias current during annealing speeds up the annealing process. The degradation of optical power at a proton flux of 1. 87×l0⁹ p/cm²/s (4. 7% at a fluence of 6×l0¹² p/cm²) is less than that at a proton flux of 1. 45×10¹⁰° p/cm²/s (10. 5% at a fluence of 6×10¹² p/cm²) due to the in-situ forward-bias annealing effects.

Original language	English (US)
Pages (from-to)	2826-2832
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	45
Issue number	6 PART 1
DOIs	https://doi.org/10.1109/23.736535
State	Published - 1998

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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@article{c9652c2ebcaa4926a77fc29f62eeebd4,

title = "Annealing effects on multi-quantum well laser diodes after proton irradiation",

abstract = "The threshold current of multi-quantum well laser diodes increased by about 1. 5 mA at a proton fluence of 6xl012 p/cm2. It recovered gradually due to forward-bias annealing at Ibias = 35 mA and became about 0. 8mA less than before irradiation after 86 h of forward bias annealing. At the same time, the optical power at a given bias became greater than before irradiation. There is a fast recovery during the first 100 s after proton irradiation. Increasing the forward bias current during annealing speeds up the annealing process. The degradation of optical power at a proton flux of 1. 87×l09 p/cm2/s (4. 7\% at a fluence of 6×l012 p/cm2) is less than that at a proton flux of 1. 45×1010° p/cm2/s (10. 5\% at a fluence of 6×1012 p/cm2) due to the in-situ forward-bias annealing effects.",

author = "Zhao, \{Y. F.\} and Schrimpf, \{R. D.\} and Patwary, \{A. R.\} and Neifeld, \{M. A.\} and Al-Johani, \{A. W.\} and Weller, \{R. A.\} and Galloway, \{K. F.\}",

note = "Funding Information: Forward-bias annealing effects on laser diodes after proton irradiation were mentioned in [1,2,9]. The recovery of threshold current was shown in [ 11 and the recovery of current vs. voltage characteristics was shown in [2]. The annealing response of epitaxial GaAs laser diodes irradiated by Co60 was studied in [lo]. In that work, it was shown that the damage recovered completely due to forward-bias annealing in one hour at room temperature. Since displacement damage effects are much more serious from proton irradiation than from Co60 irradiation and defects induced by proton irradiation are different from those induced by Co6' irradiation [ 1 11, different annealing effects are expected after proton irradiation. Thermal annealing effects on single heteroshucture laser * Work supported in part by the Air Force Office of Scientific Research.",

year = "1998",

doi = "10.1109/23.736535",

language = "English (US)",

volume = "45",

pages = "2826--2832",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6 PART 1",

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TY - JOUR

T1 - Annealing effects on multi-quantum well laser diodes after proton irradiation

AU - Zhao, Y. F.

AU - Schrimpf, R. D.

AU - Patwary, A. R.

AU - Neifeld, M. A.

AU - Al-Johani, A. W.

AU - Weller, R. A.

AU - Galloway, K. F.

N1 - Funding Information: Forward-bias annealing effects on laser diodes after proton irradiation were mentioned in [1,2,9]. The recovery of threshold current was shown in [ 11 and the recovery of current vs. voltage characteristics was shown in [2]. The annealing response of epitaxial GaAs laser diodes irradiated by Co60 was studied in [lo]. In that work, it was shown that the damage recovered completely due to forward-bias annealing in one hour at room temperature. Since displacement damage effects are much more serious from proton irradiation than from Co60 irradiation and defects induced by proton irradiation are different from those induced by Co6' irradiation [ 1 11, different annealing effects are expected after proton irradiation. Thermal annealing effects on single heteroshucture laser * Work supported in part by the Air Force Office of Scientific Research.

PY - 1998

Y1 - 1998

N2 - The threshold current of multi-quantum well laser diodes increased by about 1. 5 mA at a proton fluence of 6xl012 p/cm2. It recovered gradually due to forward-bias annealing at Ibias = 35 mA and became about 0. 8mA less than before irradiation after 86 h of forward bias annealing. At the same time, the optical power at a given bias became greater than before irradiation. There is a fast recovery during the first 100 s after proton irradiation. Increasing the forward bias current during annealing speeds up the annealing process. The degradation of optical power at a proton flux of 1. 87×l09 p/cm2/s (4. 7% at a fluence of 6×l012 p/cm2) is less than that at a proton flux of 1. 45×1010° p/cm2/s (10. 5% at a fluence of 6×1012 p/cm2) due to the in-situ forward-bias annealing effects.

AB - The threshold current of multi-quantum well laser diodes increased by about 1. 5 mA at a proton fluence of 6xl012 p/cm2. It recovered gradually due to forward-bias annealing at Ibias = 35 mA and became about 0. 8mA less than before irradiation after 86 h of forward bias annealing. At the same time, the optical power at a given bias became greater than before irradiation. There is a fast recovery during the first 100 s after proton irradiation. Increasing the forward bias current during annealing speeds up the annealing process. The degradation of optical power at a proton flux of 1. 87×l09 p/cm2/s (4. 7% at a fluence of 6×l012 p/cm2) is less than that at a proton flux of 1. 45×1010° p/cm2/s (10. 5% at a fluence of 6×1012 p/cm2) due to the in-situ forward-bias annealing effects.

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JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6 PART 1

ER -

Annealing effects on multi-quantum well laser diodes after proton irradiation

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