Annealing effects on multi-quantum well laser diodes after proton irradiation

Y. F. Zhao, R. D. Schrimpf, A. R. Patwary, M. A. Neifeld, A. W. Al-Johani, R. A. Weller, K. F. Galloway

Research output: Contribution to journalArticlepeer-review

30 Scopus citations


The threshold current of multi-quantum well laser diodes increased by about 1. 5 mA at a proton fluence of 6xl012 p/cm2. It recovered gradually due to forward-bias annealing at Ibias = 35 mA and became about 0. 8mA less than before irradiation after 86 h of forward bias annealing. At the same time, the optical power at a given bias became greater than before irradiation. There is a fast recovery during the first 100 s after proton irradiation. Increasing the forward bias current during annealing speeds up the annealing process. The degradation of optical power at a proton flux of 1. 87×l09 p/cm2/s (4. 7% at a fluence of 6×l012 p/cm2) is less than that at a proton flux of 1. 45×1010° p/cm2/s (10. 5% at a fluence of 6×1012 p/cm2) due to the in-situ forward-bias annealing effects.

Original languageEnglish (US)
Pages (from-to)2826-2832
Number of pages7
JournalIEEE Transactions on Nuclear Science
Issue number6 PART 1
StatePublished - 1998

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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