Anisotropy investigations and photoluminescence properties of porous silicon

P. Basmaji; G. Surdutovich; R. Vitlina; J. Kolenda; V. S. Bagnato; H. Mohajeri-Moghaddam; N. Peyghambarian

doi:10.1016/0038-1098(94)90565-7

Anisotropy investigations and photoluminescence properties of porous silicon

P. Basmaji, G. Surdutovich, R. Vitlina, J. Kolenda, V. S. Bagnato, H. Mohajeri-Moghaddam, N. Peyghambarian

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Porous silicon layers have been investigated using reflectance and photoluminescence techniques at room and liquid nitrogen temperatures. We observe a noticeable anisotropy of porous silicon samples. The measured parallel and normal components of the refractive index for samples with moderate porosity were 1.25 and 1.30, respectively. Possible mechanisms for the origin of the photoluminescence are discussed.

Original language	English (US)
Pages (from-to)	649-653
Number of pages	5
Journal	Solid State Communications
Volume	91
Issue number	8
DOIs	https://doi.org/10.1016/0038-1098(94)90565-7
State	Published - Aug 1994

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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@article{150836d87e514dcd9ce31467a5738b8b,

title = "Anisotropy investigations and photoluminescence properties of porous silicon",

abstract = "Porous silicon layers have been investigated using reflectance and photoluminescence techniques at room and liquid nitrogen temperatures. We observe a noticeable anisotropy of porous silicon samples. The measured parallel and normal components of the refractive index for samples with moderate porosity were 1.25 and 1.30, respectively. Possible mechanisms for the origin of the photoluminescence are discussed.",

author = "P. Basmaji and G. Surdutovich and R. Vitlina and J. Kolenda and Bagnato, {V. S.} and H. Mohajeri-Moghaddam and N. Peyghambarian",

note = "Funding Information: Acknowledgements - The authors would like to thank M.J. Semenzatoa nd S. Tonissi for technical assistanceT. his work was supportedb y CNPq and FAPESP, Brazilian foundations.T he Arizona group acknowledgesp artial support from ARO, NSF, ND0 and NATO.",

year = "1994",

month = aug,

doi = "10.1016/0038-1098(94)90565-7",

language = "English (US)",

volume = "91",

pages = "649--653",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "8",

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TY - JOUR

T1 - Anisotropy investigations and photoluminescence properties of porous silicon

AU - Basmaji, P.

AU - Surdutovich, G.

AU - Vitlina, R.

AU - Kolenda, J.

AU - Bagnato, V. S.

AU - Mohajeri-Moghaddam, H.

AU - Peyghambarian, N.

N1 - Funding Information: Acknowledgements - The authors would like to thank M.J. Semenzatoa nd S. Tonissi for technical assistanceT. his work was supportedb y CNPq and FAPESP, Brazilian foundations.T he Arizona group acknowledgesp artial support from ARO, NSF, ND0 and NATO.

PY - 1994/8

Y1 - 1994/8

N2 - Porous silicon layers have been investigated using reflectance and photoluminescence techniques at room and liquid nitrogen temperatures. We observe a noticeable anisotropy of porous silicon samples. The measured parallel and normal components of the refractive index for samples with moderate porosity were 1.25 and 1.30, respectively. Possible mechanisms for the origin of the photoluminescence are discussed.

AB - Porous silicon layers have been investigated using reflectance and photoluminescence techniques at room and liquid nitrogen temperatures. We observe a noticeable anisotropy of porous silicon samples. The measured parallel and normal components of the refractive index for samples with moderate porosity were 1.25 and 1.30, respectively. Possible mechanisms for the origin of the photoluminescence are discussed.

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U2 - 10.1016/0038-1098(94)90565-7

DO - 10.1016/0038-1098(94)90565-7

M3 - Article

AN - SCOPUS:0028482899

SN - 0038-1098

VL - 91

SP - 649

EP - 653

JO - Solid State Communications

JF - Solid State Communications

IS - 8

ER -

Anisotropy investigations and photoluminescence properties of porous silicon

Abstract

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