Anisotropically etched deep gratings for InP/InGaAsP optical devices

T. L. Koch; P. J. Corvini; W. T. Tsang

doi:10.1063/1.339319

Anisotropically etched deep gratings for InP/InGaAsP optical devices

T. L. Koch, P. J. Corvini, W. T. Tsang

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We report a new grating fabrication technique for optical devices in the InP/InGaAsP system. Conventional, but very shallow, holographically defined wet etching is used to pattern ultrathin masking layers grown by chemical beam epitaxy. This is followed by selective and anisotropic wet etching, which is shown to yield exceptionally deep, narrow-pitch gratings with reproducible profiles and dimensions.

Original language	English (US)
Pages (from-to)	3461-3463
Number of pages	3
Journal	Journal of Applied Physics
Volume	62
Issue number	8
DOIs	https://doi.org/10.1063/1.339319
State	Published - 1987
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.339319

Cite this

@article{f3f0c286f1dc410ea75d4866496c5ef3,

title = "Anisotropically etched deep gratings for InP/InGaAsP optical devices",

abstract = "We report a new grating fabrication technique for optical devices in the InP/InGaAsP system. Conventional, but very shallow, holographically defined wet etching is used to pattern ultrathin masking layers grown by chemical beam epitaxy. This is followed by selective and anisotropic wet etching, which is shown to yield exceptionally deep, narrow-pitch gratings with reproducible profiles and dimensions.",

author = "Koch, {T. L.} and Corvini, {P. J.} and Tsang, {W. T.}",

year = "1987",

doi = "10.1063/1.339319",

language = "English (US)",

volume = "62",

pages = "3461--3463",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Anisotropically etched deep gratings for InP/InGaAsP optical devices

AU - Koch, T. L.

AU - Corvini, P. J.

AU - Tsang, W. T.

PY - 1987

Y1 - 1987

N2 - We report a new grating fabrication technique for optical devices in the InP/InGaAsP system. Conventional, but very shallow, holographically defined wet etching is used to pattern ultrathin masking layers grown by chemical beam epitaxy. This is followed by selective and anisotropic wet etching, which is shown to yield exceptionally deep, narrow-pitch gratings with reproducible profiles and dimensions.

AB - We report a new grating fabrication technique for optical devices in the InP/InGaAsP system. Conventional, but very shallow, holographically defined wet etching is used to pattern ultrathin masking layers grown by chemical beam epitaxy. This is followed by selective and anisotropic wet etching, which is shown to yield exceptionally deep, narrow-pitch gratings with reproducible profiles and dimensions.

UR - http://www.scopus.com/inward/record.url?scp=0343746545&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343746545&partnerID=8YFLogxK

U2 - 10.1063/1.339319

DO - 10.1063/1.339319

M3 - Article

AN - SCOPUS:0343746545

SN - 0021-8979

VL - 62

SP - 3461

EP - 3463

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Anisotropically etched deep gratings for InP/InGaAsP optical devices

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this