Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

C. Schlichenmaier; A. Thränhardt; T. Meier; H. Grüning; P. J. Klar; W. Heimbrodt; S. W. Koch; W. W. Chow; J. Hader; J. V. Moloney

Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

C. Schlichenmaier, A. Thränhardt, T. Meier, H. Grüning, P. J. Klar, W. Heimbrodt, S. W. Koch, W. W. Chow, J. Hader, J. V. Moloney

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In_0.23Ga_0.77As/GaN_xAs_1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.

Original language	English (US)
Title of host publication	Quantum Electronics and Laser Science Conference, QELS 2005
Publisher	Optical Society of America
ISBN (Print)	1557527709, 9781557527707
State	Published - 2005
Event	Quantum Electronics and Laser Science Conference, QELS 2005 - Baltimore, MD, United States Duration: May 22 2005 → May 22 2005

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Other

Other	Quantum Electronics and Laser Science Conference, QELS 2005
Country/Territory	United States
City	Baltimore, MD
Period	5/22/05 → 5/22/05

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

Cite this

Schlichenmaier, C, Thränhardt, A, Meier, T, Grüning, H, Klar, PJ, Heimbrodt, W, Koch, SW, Chow, WW, Hader, J & Moloney, JV 2005, Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range. in Quantum Electronics and Laser Science Conference, QELS 2005. Optics InfoBase Conference Papers, Optical Society of America, Quantum Electronics and Laser Science Conference, QELS 2005, Baltimore, MD, United States, 5/22/05.

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title = "Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range",

abstract = "Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0.23Ga0.77As/GaNxAs1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.",

author = "C. Schlichenmaier and A. Thr{\"a}nhardt and T. Meier and H. Gr{\"u}ning and Klar, {P. J.} and W. Heimbrodt and Koch, {S. W.} and Chow, {W. W.} and J. Hader and Moloney, {J. V.}",

year = "2005",

language = "English (US)",

isbn = "1557527709",

series = "Optics InfoBase Conference Papers",

publisher = "Optical Society of America",

booktitle = "Quantum Electronics and Laser Science Conference, QELS 2005",

note = "Quantum Electronics and Laser Science Conference, QELS 2005 ; Conference date: 22-05-2005 Through 22-05-2005",

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TY - GEN

T1 - Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

AU - Schlichenmaier, C.

AU - Thränhardt, A.

AU - Meier, T.

AU - Grüning, H.

AU - Klar, P. J.

AU - Heimbrodt, W.

AU - Koch, S. W.

AU - Chow, W. W.

AU - Hader, J.

AU - Moloney, J. V.

PY - 2005

Y1 - 2005

N2 - Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0.23Ga0.77As/GaNxAs1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.

AB - Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0.23Ga0.77As/GaNxAs1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.

UR - http://www.scopus.com/inward/record.url?scp=84899525302&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84899525302&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84899525302

SN - 1557527709

SN - 9781557527707

T3 - Optics InfoBase Conference Papers

BT - Quantum Electronics and Laser Science Conference, QELS 2005

PB - Optical Society of America

T2 - Quantum Electronics and Laser Science Conference, QELS 2005

Y2 - 22 May 2005 through 22 May 2005

ER -

Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

Abstract

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