Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

C. Schlichenmaier; A. Thränhardt; T. Meier; H. Grüning; P. J. Klar; W. Heimbrodt; S. W. Koch; W. W. Chow; J. Hader; J. V. Moloney

Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

C. Schlichenmaier, A. Thränhardt, T. Meier, H. Grüning, P. J. Klar, W. Heimbrodt, S. W. Koch, W. W. Chow, J. Hader, J. V. Moloney

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In_0:23Ga_0:77As/GaN_xAs_1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.

Original language	English (US)
Title of host publication	Conference on Lasers and Electro-Optics, CLEO 2006
Publisher	Optical Society of America
ISBN (Print)	1557528136, 9781557528131
State	Published - 2006
Event	Conference on Lasers and Electro-Optics, CLEO 2006 - Long Beach, CA, United States Duration: May 21 2006 → May 21 2006

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Other

Other	Conference on Lasers and Electro-Optics, CLEO 2006
Country/Territory	United States
City	Long Beach, CA
Period	5/21/06 → 5/21/06

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

Cite this

Schlichenmaier, C, Thränhardt, A, Meier, T, Grüning, H, Klar, PJ, Heimbrodt, W, Koch, SW, Chow, WW, Hader, J & Moloney, JV 2006, Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range. in Conference on Lasers and Electro-Optics, CLEO 2006. Optics InfoBase Conference Papers, Optical Society of America, Conference on Lasers and Electro-Optics, CLEO 2006, Long Beach, CA, United States, 5/21/06.

@inproceedings{18f889d101f24527994ee5626b1afbf3,

title = "Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range",

abstract = "Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0:23Ga0:77As/GaNxAs1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.",

author = "C. Schlichenmaier and A. Thr{\"a}nhardt and T. Meier and H. Gr{\"u}ning and Klar, {P. J.} and W. Heimbrodt and Koch, {S. W.} and Chow, {W. W.} and J. Hader and Moloney, {J. V.}",

year = "2006",

language = "English (US)",

isbn = "1557528136",

series = "Optics InfoBase Conference Papers",

publisher = "Optical Society of America",

booktitle = "Conference on Lasers and Electro-Optics, CLEO 2006",

note = "Conference on Lasers and Electro-Optics, CLEO 2006 ; Conference date: 21-05-2006 Through 21-05-2006",

}

TY - GEN

T1 - Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

AU - Schlichenmaier, C.

AU - Thränhardt, A.

AU - Meier, T.

AU - Grüning, H.

AU - Klar, P. J.

AU - Heimbrodt, W.

AU - Koch, S. W.

AU - Chow, W. W.

AU - Hader, J.

AU - Moloney, J. V.

PY - 2006

Y1 - 2006

N2 - Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0:23Ga0:77As/GaNxAs1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.

AB - Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0:23Ga0:77As/GaNxAs1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.

UR - http://www.scopus.com/inward/record.url?scp=84899127071&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84899127071&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84899127071

SN - 1557528136

SN - 9781557528131

T3 - Optics InfoBase Conference Papers

BT - Conference on Lasers and Electro-Optics, CLEO 2006

PB - Optical Society of America

T2 - Conference on Lasers and Electro-Optics, CLEO 2006

Y2 - 21 May 2006 through 21 May 2006

ER -

Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

Abstract

Publication series

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this