Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

C. Schlichenmaier; A. Thränhardt; T. Meier; H. Grüning; P. J. Klar; W. Heimbrodt; S. W. Koch; W. W. Chow; J. Hader; J. V. Moloney

Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

C. Schlichenmaier, A. Thränhardt, T. Meier, H. Grüning, P. J. Klar, W. Heimbrodt, S. W. Koch, W. W. Chow, J. Hader, J. V. Moloney

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In_0:23Ga_0:77As/GaN_xAs_1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.

Original language	English (US)
Title of host publication	Conference on Lasers and Electro-Optics, CLEO 2005
Publisher	Optical Society of America
ISBN (Print)	1557527709, 9781557527707
State	Published - 2005
Event	Conference on Lasers and Electro-Optics, CLEO 2005 - Baltimore, MD, United States Duration: May 22 2005 → May 22 2005

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Other

Other	Conference on Lasers and Electro-Optics, CLEO 2005
Country/Territory	United States
City	Baltimore, MD
Period	5/22/05 → 5/22/05

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

Cite this

Schlichenmaier, C, Thränhardt, A, Meier, T, Grüning, H, Klar, PJ, Heimbrodt, W, Koch, SW, Chow, WW, Hader, J & Moloney, JV 2005, Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range. in Conference on Lasers and Electro-Optics, CLEO 2005. Optics InfoBase Conference Papers, Optical Society of America, Conference on Lasers and Electro-Optics, CLEO 2005, Baltimore, MD, United States, 5/22/05.

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title = "Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range",

abstract = "Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0:23Ga0:77As/GaNxAs1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.",

author = "C. Schlichenmaier and A. Thr{\"a}nhardt and T. Meier and H. Gr{\"u}ning and Klar, {P. J.} and W. Heimbrodt and Koch, {S. W.} and Chow, {W. W.} and J. Hader and Moloney, {J. V.}",

year = "2005",

language = "English (US)",

isbn = "1557527709",

series = "Optics InfoBase Conference Papers",

publisher = "Optical Society of America",

booktitle = "Conference on Lasers and Electro-Optics, CLEO 2005",

note = "Conference on Lasers and Electro-Optics, CLEO 2005 ; Conference date: 22-05-2005 Through 22-05-2005",

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TY - GEN

T1 - Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

AU - Schlichenmaier, C.

AU - Thränhardt, A.

AU - Meier, T.

AU - Grüning, H.

AU - Klar, P. J.

AU - Heimbrodt, W.

AU - Koch, S. W.

AU - Chow, W. W.

AU - Hader, J.

AU - Moloney, J. V.

PY - 2005

Y1 - 2005

N2 - Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0:23Ga0:77As/GaNxAs1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.

AB - Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0:23Ga0:77As/GaNxAs1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.

UR - http://www.scopus.com/inward/record.url?scp=84899153795&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84899153795&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84899153795

SN - 1557527709

SN - 9781557527707

T3 - Optics InfoBase Conference Papers

BT - Conference on Lasers and Electro-Optics, CLEO 2005

PB - Optical Society of America

T2 - Conference on Lasers and Electro-Optics, CLEO 2005

Y2 - 22 May 2005 through 22 May 2005

ER -

Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

Abstract

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