Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

C. Schlichenmaier; A. Thränhardt; T. Meier; H. Grüning; P. J. Klar; W. Heimbrodt; S. W. Koch; W. W. Chow; J. Hader; J. V. Moloney

Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

C. Schlichenmaier, A. Thränhardt, T. Meier, H. Grüning, P. J. Klar, W. Heimbrodt, S. W. Koch, W. W. Chow, J. Hader, J. V. Moloney

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In _0.23Ga _0.77As/GaN _xAs _1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.

Original language	English (US)
Title of host publication	2005 Quantum Electronics and Laser Science Conference (QELS)
Pages	1053-1055
Number of pages	3
State	Published - 2005
Event	2005 Quantum Electronics and Laser Science Conference (QELS) - Baltimore, MD, United States Duration: May 22 2005 → May 27 2005

Publication series

Name	Quantum Electronics and Laser Science Conference (QELS)
Volume	2

Other

Other	2005 Quantum Electronics and Laser Science Conference (QELS)
Country/Territory	United States
City	Baltimore, MD
Period	5/22/05 → 5/27/05

ASJC Scopus subject areas

General Engineering

Cite this

Schlichenmaier, C., Thränhardt, A., Meier, T., Grüning, H., Klar, P. J., Heimbrodt, W., Koch, S. W., Chow, W. W., Hader, J., & Moloney, J. V. (2005). Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range. In 2005 Quantum Electronics and Laser Science Conference (QELS) (pp. 1053-1055). Article JTuC92 (Quantum Electronics and Laser Science Conference (QELS); Vol. 2).

Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range. / Schlichenmaier, C.; Thränhardt, A.; Meier, T. et al.
2005 Quantum Electronics and Laser Science Conference (QELS). 2005. p. 1053-1055 JTuC92 (Quantum Electronics and Laser Science Conference (QELS); Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Schlichenmaier, C, Thränhardt, A, Meier, T, Grüning, H, Klar, PJ, Heimbrodt, W, Koch, SW, Chow, WW, Hader, J & Moloney, JV 2005, Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range. in 2005 Quantum Electronics and Laser Science Conference (QELS)., JTuC92, Quantum Electronics and Laser Science Conference (QELS), vol. 2, pp. 1053-1055, 2005 Quantum Electronics and Laser Science Conference (QELS), Baltimore, MD, United States, 5/22/05.

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title = "Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range",

abstract = "Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In 0.23Ga 0.77As/GaN xAs 1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.",

author = "C. Schlichenmaier and A. Thr{\"a}nhardt and T. Meier and H. Gr{\"u}ning and Klar, {P. J.} and W. Heimbrodt and Koch, {S. W.} and Chow, {W. W.} and J. Hader and Moloney, {J. V.}",

year = "2005",

language = "English (US)",

isbn = "1557527962",

series = "Quantum Electronics and Laser Science Conference (QELS)",

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AU - Schlichenmaier, C.

AU - Thränhardt, A.

AU - Meier, T.

AU - Grüning, H.

AU - Klar, P. J.

AU - Heimbrodt, W.

AU - Koch, S. W.

AU - Chow, W. W.

AU - Hader, J.

AU - Moloney, J. V.

PY - 2005

Y1 - 2005

N2 - Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In 0.23Ga 0.77As/GaN xAs 1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.

AB - Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In 0.23Ga 0.77As/GaN xAs 1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.

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M3 - Conference contribution

AN - SCOPUS:27144545083

SN - 1557527962

SN - 9781557527967

T3 - Quantum Electronics and Laser Science Conference (QELS)

SP - 1053

EP - 1055

BT - 2005 Quantum Electronics and Laser Science Conference (QELS)

T2 - 2005 Quantum Electronics and Laser Science Conference (QELS)

Y2 - 22 May 2005 through 27 May 2005

ER -

Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

Abstract

Publication series

Other

ASJC Scopus subject areas

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