Analysis of a novel slurry injection system in chemical mechanical planarization

Anand Meled; Yun Zhuang; Yasa Adi Sampurno; Siannie Theng; Yubo Jiao; Leonard Borucki; Ara Philipossian

doi:10.1143/JJAP.50.05EC01

Analysis of a novel slurry injection system in chemical mechanical planarization

Anand Meled, Yun Zhuang, Yasa Adi Sampurno, Siannie Theng, Yubo Jiao, Leonard Borucki, Ara Philipossian

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Slurry mean residence time (MRT), removal rate, and polishing defects were analyzed for a novel slurry injection system used in chemical mechanical planarization. The novel slurry injection system was placed adjacent to the wafer on the pad surface and slurry was injected towards the wafer through multiple holes in the trailing edge of the injector bottom. Results showed the novel slurry injection system provided more efficient slurry delivery to the pad-wafer interface and generated lower slurry MRT, higher removal rate, and lower polishing defects than the standard pad center area slurry application method currently used in the IC manufacturing industry.

Original language	English (US)
Article number	05EC01
Journal	Japanese Journal of Applied Physics
Volume	50
Issue number	5 PART 2
DOIs	https://doi.org/10.1143/JJAP.50.05EC01
State	Published - May 2011
Externally published	Yes

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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title = "Analysis of a novel slurry injection system in chemical mechanical planarization",

abstract = "Slurry mean residence time (MRT), removal rate, and polishing defects were analyzed for a novel slurry injection system used in chemical mechanical planarization. The novel slurry injection system was placed adjacent to the wafer on the pad surface and slurry was injected towards the wafer through multiple holes in the trailing edge of the injector bottom. Results showed the novel slurry injection system provided more efficient slurry delivery to the pad-wafer interface and generated lower slurry MRT, higher removal rate, and lower polishing defects than the standard pad center area slurry application method currently used in the IC manufacturing industry.",

author = "Anand Meled and Yun Zhuang and Sampurno, {Yasa Adi} and Siannie Theng and Yubo Jiao and Leonard Borucki and Ara Philipossian",

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language = "English (US)",

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AU - Meled, Anand

AU - Zhuang, Yun

AU - Sampurno, Yasa Adi

AU - Theng, Siannie

AU - Jiao, Yubo

AU - Borucki, Leonard

AU - Philipossian, Ara

PY - 2011/5

Y1 - 2011/5

N2 - Slurry mean residence time (MRT), removal rate, and polishing defects were analyzed for a novel slurry injection system used in chemical mechanical planarization. The novel slurry injection system was placed adjacent to the wafer on the pad surface and slurry was injected towards the wafer through multiple holes in the trailing edge of the injector bottom. Results showed the novel slurry injection system provided more efficient slurry delivery to the pad-wafer interface and generated lower slurry MRT, higher removal rate, and lower polishing defects than the standard pad center area slurry application method currently used in the IC manufacturing industry.

AB - Slurry mean residence time (MRT), removal rate, and polishing defects were analyzed for a novel slurry injection system used in chemical mechanical planarization. The novel slurry injection system was placed adjacent to the wafer on the pad surface and slurry was injected towards the wafer through multiple holes in the trailing edge of the injector bottom. Results showed the novel slurry injection system provided more efficient slurry delivery to the pad-wafer interface and generated lower slurry MRT, higher removal rate, and lower polishing defects than the standard pad center area slurry application method currently used in the IC manufacturing industry.

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Analysis of a novel slurry injection system in chemical mechanical planarization

Abstract

ASJC Scopus subject areas

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