Abstract
The choice of InP HEMT technology is discussed for a highly efficient integrated T/R module. The module includes a receive path comprising of a low noise amplifier, phase shifter and amplifier consuming only 5mW of DC power at X-band. The transmit path combines phase shifters and amplifiers to provide 10mW of power per module at an efficiency of 50%. This is achieved by increasing the Cut-off frequency of InP HEMT devices and sacrificing their gain for lower DC power consumption. This provides both DC and PF performance criteria for the space based radar antenna design requirements. Future T/R module technologies are also discussed based on the Antimonide based material system which have already shown a factor of 3-4 reduction in DC power consumption compared to InP HEMT technology.
Original language | English (US) |
---|---|
Pages | 6-8 |
Number of pages | 3 |
State | Published - 2004 |
Externally published | Yes |
Event | Proceedings of the IEEE Radar Conference - Philadelphia, PA, United States Duration: Apr 26 2004 → Apr 29 2004 |
Other
Other | Proceedings of the IEEE Radar Conference |
---|---|
Country/Territory | United States |
City | Philadelphia, PA |
Period | 4/26/04 → 4/29/04 |
Keywords
- Antimonide-based compound semiconductor (ABCS) HEMT
- InAs/AlSb HFET
- InP HEMT
- Integrated high efficiency MMICs
- Low noise amplifier
- Millimeter-waves
- Space-based radar
- T/R modules
ASJC Scopus subject areas
- Electrical and Electronic Engineering