An i-v measurement method and its application for characterizing ferroelectric pzt thin films

S. C. Lee; K. F. Galloway; D. P. Birnie; D. R. Uhlmann

doi:10.1080/10584589408018658

An i-v measurement method and its application for characterizing ferroelectric pzt thin films

S. C. Lee, K. F. Galloway, D. P. Birnie, D. R. Uhlmann

Research output: Contribution to journal › Article › peer-review

Abstract

A static I-V measurement method for ferroelectric thin films is developed to distinguish the leakage current from the switching current. The initial polarization state and the exponential decay behavior of the switching current are considered in this method. The feasibility of this I-V measurement method is investigated by examining fatigue effects on sol-gel derived PZT thin films. Changes in polarization due to fatigue are correlated with the changes in the switching current and the leakage current.

Original language	English (US)
Pages (from-to)	31-43
Number of pages	13
Journal	Integrated Ferroelectrics
Volume	4
Issue number	1
DOIs	https://doi.org/10.1080/10584589408018658
State	Published - Feb 1994

Keywords

fatigue
ferroekctric
static I-V measurement

ASJC Scopus subject areas

Control and Systems Engineering
Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1080/10584589408018658

Cite this

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title = "An i-v measurement method and its application for characterizing ferroelectric pzt thin films",

abstract = "A static I-V measurement method for ferroelectric thin films is developed to distinguish the leakage current from the switching current. The initial polarization state and the exponential decay behavior of the switching current are considered in this method. The feasibility of this I-V measurement method is investigated by examining fatigue effects on sol-gel derived PZT thin films. Changes in polarization due to fatigue are correlated with the changes in the switching current and the leakage current.",

keywords = "fatigue, ferroekctric, static I-V measurement",

author = "Lee, {S. C.} and Galloway, {K. F.} and Birnie, {D. P.} and Uhlmann, {D. R.}",

note = "Funding Information: tThis work was supported in part by the U.S. Navy through contract No. N00014-YO-C and in part by the Air Force Office of Scientific Research. $A preliminary version of this work, entitled Fatigue Effect on the I-V Characteristics of Sol-Gel Derived PZT Thin Films, was presented at Eighth International Symposium on the Application of Ferroelectric5 (ISAF) held at Greenville, SC in 1992.",

year = "1994",

month = feb,

doi = "10.1080/10584589408018658",

language = "English (US)",

volume = "4",

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journal = "Integrated Ferroelectrics",

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T1 - An i-v measurement method and its application for characterizing ferroelectric pzt thin films

AU - Lee, S. C.

AU - Galloway, K. F.

AU - Birnie, D. P.

AU - Uhlmann, D. R.

N1 - Funding Information: tThis work was supported in part by the U.S. Navy through contract No. N00014-YO-C and in part by the Air Force Office of Scientific Research. $A preliminary version of this work, entitled Fatigue Effect on the I-V Characteristics of Sol-Gel Derived PZT Thin Films, was presented at Eighth International Symposium on the Application of Ferroelectric5 (ISAF) held at Greenville, SC in 1992.

PY - 1994/2

Y1 - 1994/2

N2 - A static I-V measurement method for ferroelectric thin films is developed to distinguish the leakage current from the switching current. The initial polarization state and the exponential decay behavior of the switching current are considered in this method. The feasibility of this I-V measurement method is investigated by examining fatigue effects on sol-gel derived PZT thin films. Changes in polarization due to fatigue are correlated with the changes in the switching current and the leakage current.

AB - A static I-V measurement method for ferroelectric thin films is developed to distinguish the leakage current from the switching current. The initial polarization state and the exponential decay behavior of the switching current are considered in this method. The feasibility of this I-V measurement method is investigated by examining fatigue effects on sol-gel derived PZT thin films. Changes in polarization due to fatigue are correlated with the changes in the switching current and the leakage current.

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KW - ferroekctric

KW - static I-V measurement

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An i-v measurement method and its application for characterizing ferroelectric pzt thin films

Abstract

Keywords

ASJC Scopus subject areas

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