All-optical, high contrast GaAlInAs multiple quantum well asymmetric reflection modulator at 1.3 μm

M. F. Krol; T. Ohtsuki; G. Khitrova; R. K. Boncek; B. P. McGinnis; H. M. Gibbs; N. Peyghambarian

doi:10.1063/1.108637

All-optical, high contrast GaAlInAs multiple quantum well asymmetric reflection modulator at 1.3 μm

M. F. Krol, T. Ohtsuki, G. Khitrova, R. K. Boncek, B. P. McGinnis, H. M. Gibbs, N. Peyghambarian

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A high contrast, low intensity GaAlInAs/AlInAs multiple quantum well asymmetric Fabry-Perot reflection modulator for operation at 1.3 μm has been demonstrated. The reflection modulator takes advantage of the large absorptive and refractive nonlinearities associated with saturating the heavy-hole exciton resonance. We achieve an on/off contrast ratio in excess of 1000:1 (30 dB) and an insertion loss of 2.2 dB at a pump intensity of 30 kW/cm², corresponding to a carrier density of 4.5×10¹⁷ cm^-3. The modulator was demonstrated to have a large operating bandwidth, achieving an on/off contrast ratio of greater than 100:1 over a 5 nm optical band. The operating speed of the modulator was measured and found to approach 1 GHz.

Original language	English (US)
Pages (from-to)	1550-1552
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	13
DOIs	https://doi.org/10.1063/1.108637
State	Published - 1993

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "All-optical, high contrast GaAlInAs multiple quantum well asymmetric reflection modulator at 1.3 μm",

abstract = "A high contrast, low intensity GaAlInAs/AlInAs multiple quantum well asymmetric Fabry-Perot reflection modulator for operation at 1.3 μm has been demonstrated. The reflection modulator takes advantage of the large absorptive and refractive nonlinearities associated with saturating the heavy-hole exciton resonance. We achieve an on/off contrast ratio in excess of 1000:1 (30 dB) and an insertion loss of 2.2 dB at a pump intensity of 30 kW/cm2, corresponding to a carrier density of 4.5×1017 cm-3. The modulator was demonstrated to have a large operating bandwidth, achieving an on/off contrast ratio of greater than 100:1 over a 5 nm optical band. The operating speed of the modulator was measured and found to approach 1 GHz.",

author = "Krol, {M. F.} and T. Ohtsuki and G. Khitrova and Boncek, {R. K.} and McGinnis, {B. P.} and Gibbs, {H. M.} and N. Peyghambarian",

year = "1993",

doi = "10.1063/1.108637",

language = "English (US)",

volume = "62",

pages = "1550--1552",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - All-optical, high contrast GaAlInAs multiple quantum well asymmetric reflection modulator at 1.3 μm

AU - Krol, M. F.

AU - Ohtsuki, T.

AU - Khitrova, G.

AU - Boncek, R. K.

AU - McGinnis, B. P.

AU - Gibbs, H. M.

AU - Peyghambarian, N.

PY - 1993

Y1 - 1993

N2 - A high contrast, low intensity GaAlInAs/AlInAs multiple quantum well asymmetric Fabry-Perot reflection modulator for operation at 1.3 μm has been demonstrated. The reflection modulator takes advantage of the large absorptive and refractive nonlinearities associated with saturating the heavy-hole exciton resonance. We achieve an on/off contrast ratio in excess of 1000:1 (30 dB) and an insertion loss of 2.2 dB at a pump intensity of 30 kW/cm2, corresponding to a carrier density of 4.5×1017 cm-3. The modulator was demonstrated to have a large operating bandwidth, achieving an on/off contrast ratio of greater than 100:1 over a 5 nm optical band. The operating speed of the modulator was measured and found to approach 1 GHz.

AB - A high contrast, low intensity GaAlInAs/AlInAs multiple quantum well asymmetric Fabry-Perot reflection modulator for operation at 1.3 μm has been demonstrated. The reflection modulator takes advantage of the large absorptive and refractive nonlinearities associated with saturating the heavy-hole exciton resonance. We achieve an on/off contrast ratio in excess of 1000:1 (30 dB) and an insertion loss of 2.2 dB at a pump intensity of 30 kW/cm2, corresponding to a carrier density of 4.5×1017 cm-3. The modulator was demonstrated to have a large operating bandwidth, achieving an on/off contrast ratio of greater than 100:1 over a 5 nm optical band. The operating speed of the modulator was measured and found to approach 1 GHz.

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All-optical, high contrast GaAlInAs multiple quantum well asymmetric reflection modulator at 1.3 μm

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