All-Binary InAs/GaAs Optical Waveguide Phase Modulator at 1.06 μm

T. C. Hasenberg, D. Yap, A. Kost

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


We demonstrate the use of multiple [(InAs) (GaAs)]/GaAs short-period strained-layer superlattice quantum wells for optical waveguide modulation at 1.06 μm. We achieve μ phase modulation with 2.3 V applied (Vπ × L = 4.6 V mm, or 39°/V mm) in the presence of negligible absorption change using this all-binary modulator.

Original languageEnglish (US)
Pages (from-to)1210-1212
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number10
StatePublished - Oct 1994
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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