All-Binary InAs/GaAs Optical Waveguide Phase Modulator at 1.06 μm

T. C. Hasenberg; D. Yap; A. Kost

doi:10.1109/68.329641

All-Binary InAs/GaAs Optical Waveguide Phase Modulator at 1.06 μm

T. C. Hasenberg, D. Yap, A. Kost

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We demonstrate the use of multiple [(InAs) (GaAs)]/GaAs short-period strained-layer superlattice quantum wells for optical waveguide modulation at 1.06 μm. We achieve μ phase modulation with 2.3 V applied (V_π × L = 4.6 V mm, or 39°/V mm) in the presence of negligible absorption change using this all-binary modulator.

Original language	English (US)
Pages (from-to)	1210-1212
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	6
Issue number	10
DOIs	https://doi.org/10.1109/68.329641
State	Published - Oct 1994
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.329641

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title = "All-Binary InAs/GaAs Optical Waveguide Phase Modulator at 1.06 μm",

abstract = "We demonstrate the use of multiple [(InAs) (GaAs)]/GaAs short-period strained-layer superlattice quantum wells for optical waveguide modulation at 1.06 μm. We achieve μ phase modulation with 2.3 V applied (Vπ × L = 4.6 V mm, or 39°/V mm) in the presence of negligible absorption change using this all-binary modulator.",

author = "Hasenberg, {T. C.} and D. Yap and A. Kost",

year = "1994",

month = oct,

doi = "10.1109/68.329641",

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AU - Yap, D.

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Y1 - 1994/10

N2 - We demonstrate the use of multiple [(InAs) (GaAs)]/GaAs short-period strained-layer superlattice quantum wells for optical waveguide modulation at 1.06 μm. We achieve μ phase modulation with 2.3 V applied (Vπ × L = 4.6 V mm, or 39°/V mm) in the presence of negligible absorption change using this all-binary modulator.

AB - We demonstrate the use of multiple [(InAs) (GaAs)]/GaAs short-period strained-layer superlattice quantum wells for optical waveguide modulation at 1.06 μm. We achieve μ phase modulation with 2.3 V applied (Vπ × L = 4.6 V mm, or 39°/V mm) in the presence of negligible absorption change using this all-binary modulator.

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All-Binary InAs/GaAs Optical Waveguide Phase Modulator at 1.06 μm

Abstract

ASJC Scopus subject areas

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