TY - GEN
T1 - Aggressive diamond characterization and wear analysis during chemical mechanical planarization
AU - Philipossian, A.
AU - Wu, C.
AU - Zhuang, Y.
AU - Liao, X.
AU - Jiao, Y.
AU - Sampurno, Y.
AU - Theng, S.
AU - Sun, F.
AU - Naman, A.
PY - 2013
Y1 - 2013
N2 - In this study, a 3M A3700 diamond disc was used to condition a Cabot Microelectronics Corporation D100 pad for 30 hours, and wear on its aggressive diamonds was analyzed. The top 20 aggressive diamonds for two perpendicular disc orientations were identified before wafer polishing, as well as after 15-hour and 30-hour polishing. Results showed that the original top 20 aggressive diamonds identified before polishing were subjected to wear after the first 15-hour polishing as the furrow surface area that they generated decreased dramatically by 47%. As these original aggressive diamonds were worn, seven new aggressive diamonds were "born" and joined the new top 20 list for both disc orientations. After the second 15-hour wafer polishing, the furrow surface area of these new top 20 aggressive diamonds did not change significantly. The furrow surface area created by all the active diamonds exhibited the same trend as the top 20 aggressive diamonds, confirming that most pad conditioning work was performed by these aggressive diamonds and that the disc lost its aggressiveness in the first 15 hours of polishing and then maintained its aggressiveness during the second 15 hours.
AB - In this study, a 3M A3700 diamond disc was used to condition a Cabot Microelectronics Corporation D100 pad for 30 hours, and wear on its aggressive diamonds was analyzed. The top 20 aggressive diamonds for two perpendicular disc orientations were identified before wafer polishing, as well as after 15-hour and 30-hour polishing. Results showed that the original top 20 aggressive diamonds identified before polishing were subjected to wear after the first 15-hour polishing as the furrow surface area that they generated decreased dramatically by 47%. As these original aggressive diamonds were worn, seven new aggressive diamonds were "born" and joined the new top 20 list for both disc orientations. After the second 15-hour wafer polishing, the furrow surface area of these new top 20 aggressive diamonds did not change significantly. The furrow surface area created by all the active diamonds exhibited the same trend as the top 20 aggressive diamonds, confirming that most pad conditioning work was performed by these aggressive diamonds and that the disc lost its aggressiveness in the first 15 hours of polishing and then maintained its aggressiveness during the second 15 hours.
UR - http://www.scopus.com/inward/record.url?scp=84875959077&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84875959077&partnerID=8YFLogxK
U2 - 10.1149/05201.0597ecst
DO - 10.1149/05201.0597ecst
M3 - Conference contribution
AN - SCOPUS:84875959077
SN - 9781607683810
T3 - ECS Transactions
SP - 597
EP - 603
BT - China Semiconductor Technology International Conference 2013, CSTIC 2013
T2 - China Semiconductor Technology International Conference 2013, CSTIC 2013
Y2 - 19 March 2013 through 21 March 2013
ER -