Abstract
Gate oxide breakdown is one of the major yield and reliability concerns in MOS technology. In this paper the influence of modified RCA pre-oxidation cleanings on the gate oxide integrity is investigated. The effect of the Si-surface roughening generated during the SCl-clean on the oxide characteristics is illustrated. Selective contamination experiments are used to investigate the effect of small amounts of contamination on the oxide breakdown. Finally, HF-last processes are investigated and some novel HF-processes are proposed.
| Original language | English (US) |
|---|---|
| Pages | 187-189 |
| Number of pages | 3 |
| State | Published - 1992 |
| Event | Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn Duration: Aug 26 1992 → Aug 28 1992 |
Other
| Other | Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 |
|---|---|
| City | Tsukuba, Jpn |
| Period | 8/26/92 → 8/28/92 |
ASJC Scopus subject areas
- General Engineering