AC hot carrier lifetimes in oxide and ROXNOX N-channel MOSFET's

Kaizad R. Mistry, Brian S. Doyle, Ara Philipossian, Daniel B. Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations


A recently developed model for AC hot carrier degradation is extended to low-Temperature operation as well as to ROXNOX (reoxidized nitrided oxide) dielectrics. Three hot carrier damage mechanisms are incorporated into the model: interface states and oxide electron traps created at low gate voltages, interface states created at medium gate voltages, and oxide electron traps created at high gate voltages. It is shown that the quasi-static contributions of these three mechanisms fully account for hot-carrier degradation under AC stress. The model is shown to be valid at 173 K and 295 K for both typical and worst-case AC stress waveforms found in CMOS circuits. It is also shown to be valid for ROXNOX MOSFETs.

Original languageEnglish (US)
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780302435
StatePublished - 1991
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: Dec 8 1991Dec 11 1991

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918


OtherInternational Electron Devices Meeting, IEDM 1991
Country/TerritoryUnited States


  • Circuits
  • Degradation
  • Dielectrics
  • Electron traps
  • Hot carriers
  • Interface states
  • Low voltage
  • Medium voltage
  • Semiconductor device modeling
  • Stress

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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