A transmission and high-resolution electron microscope study of cozonally twinned growth of eutectic silicon in unmodified Al-Si alloys

M. Shamsuzzoha; L. M. Hogan; David J. Smith; P. A. Deymier

doi:10.1016/0022-0248(91)90119-P

A transmission and high-resolution electron microscope study of cozonally twinned growth of eutectic silicon in unmodified Al-Si alloys

M. Shamsuzzoha, L. M. Hogan, David J. Smith, P. A. Deymier

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Abstract

The crystallography of the silicon phase in unmodified Al-Si eutectic alloys has been studied by conventional and high-resolution electron microscopy. Examination of the flake morphology eutectic silicon, at two mutually perpendicular 〈110〉 zone axes, revealed internal twin traces at only one 〈110〉 zone axis, parallel to the flake surface. Internal twins in the silicon phase appear to develop as a result of purely two-dimensional crystal growth on pre-existing silicon nuclei containing a group of parallel twins. The twins grow along coplanar 〈112〉 directions by the twin plane re-entrant edge (TPRE) mechanism. Stacking faults and twins present in the high-resolution images of eutectic silicon are consistent with TPRE growth originating at the silicon nuclei containing parallel twins.

Original language	English (US)
Pages (from-to)	635-643
Number of pages	9
Journal	Journal of Crystal Growth
Volume	112
Issue number	4
DOIs	https://doi.org/10.1016/0022-0248(91)90119-P
State	Published - Jul 1991

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(91)90119-P

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@article{43ce52a354cb4376a6ae2315f4fd4fa7,

title = "A transmission and high-resolution electron microscope study of cozonally twinned growth of eutectic silicon in unmodified Al-Si alloys",

abstract = "The crystallography of the silicon phase in unmodified Al-Si eutectic alloys has been studied by conventional and high-resolution electron microscopy. Examination of the flake morphology eutectic silicon, at two mutually perpendicular 〈110〉 zone axes, revealed internal twin traces at only one 〈110〉 zone axis, parallel to the flake surface. Internal twins in the silicon phase appear to develop as a result of purely two-dimensional crystal growth on pre-existing silicon nuclei containing a group of parallel twins. The twins grow along coplanar 〈112〉 directions by the twin plane re-entrant edge (TPRE) mechanism. Stacking faults and twins present in the high-resolution images of eutectic silicon are consistent with TPRE growth originating at the silicon nuclei containing parallel twins.",

author = "M. Shamsuzzoha and Hogan, {L. M.} and Smith, {David J.} and Deymier, {P. A.}",

note = "Funding Information: State University, supported by National Science Foundation Grant DMR-86-11609. We are pleased to acknowledge financial support from the US Department of Energy under contract DE-FGO2-87ER42585.",

year = "1991",

month = jul,

doi = "10.1016/0022-0248(91)90119-P",

language = "English (US)",

volume = "112",

pages = "635--643",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "4",

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T1 - A transmission and high-resolution electron microscope study of cozonally twinned growth of eutectic silicon in unmodified Al-Si alloys

AU - Shamsuzzoha, M.

AU - Hogan, L. M.

AU - Smith, David J.

AU - Deymier, P. A.

N1 - Funding Information: State University, supported by National Science Foundation Grant DMR-86-11609. We are pleased to acknowledge financial support from the US Department of Energy under contract DE-FGO2-87ER42585.

PY - 1991/7

Y1 - 1991/7

N2 - The crystallography of the silicon phase in unmodified Al-Si eutectic alloys has been studied by conventional and high-resolution electron microscopy. Examination of the flake morphology eutectic silicon, at two mutually perpendicular 〈110〉 zone axes, revealed internal twin traces at only one 〈110〉 zone axis, parallel to the flake surface. Internal twins in the silicon phase appear to develop as a result of purely two-dimensional crystal growth on pre-existing silicon nuclei containing a group of parallel twins. The twins grow along coplanar 〈112〉 directions by the twin plane re-entrant edge (TPRE) mechanism. Stacking faults and twins present in the high-resolution images of eutectic silicon are consistent with TPRE growth originating at the silicon nuclei containing parallel twins.

AB - The crystallography of the silicon phase in unmodified Al-Si eutectic alloys has been studied by conventional and high-resolution electron microscopy. Examination of the flake morphology eutectic silicon, at two mutually perpendicular 〈110〉 zone axes, revealed internal twin traces at only one 〈110〉 zone axis, parallel to the flake surface. Internal twins in the silicon phase appear to develop as a result of purely two-dimensional crystal growth on pre-existing silicon nuclei containing a group of parallel twins. The twins grow along coplanar 〈112〉 directions by the twin plane re-entrant edge (TPRE) mechanism. Stacking faults and twins present in the high-resolution images of eutectic silicon are consistent with TPRE growth originating at the silicon nuclei containing parallel twins.

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A transmission and high-resolution electron microscope study of cozonally twinned growth of eutectic silicon in unmodified Al-Si alloys

Abstract

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