A stepwise constant conductance approach for simulating resonant tunneling diodes

Bharat Sukhwani; Janet M. Wang

doi:10.1109/ISCAS.2005.1465138

A stepwise constant conductance approach for simulating resonant tunneling diodes

Bharat Sukhwani, Janet M. Wang

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Current CMOS technology is reaching its scaling limits and thus the CMOS based devices are slowly being replaced by new nanotechnology devices. These nanotechnology devices, however, pose some simulation challenges due to their non-monotonic I-V characteristics and uncertain properties which lead to the negative differential resistance (NDR) problem and the chaotic performance of the simulator. This paper proposes a new circuit simulation approach that can effectively simulate nanotechnology devices, avoiding such problems. The experimental results show a 20-30 times speedup comparing with existing simulators.

Original language	English (US)
Article number	1465138
Pages (from-to)	2518-2521
Number of pages	4
Journal	Proceedings - IEEE International Symposium on Circuits and Systems
DOIs	https://doi.org/10.1109/ISCAS.2005.1465138
State	Published - 2005
Event	IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005 - Kobe, Japan Duration: May 23 2005 → May 26 2005

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ISCAS.2005.1465138

Cite this

@article{525f9950e9ca4913a8bb9ba7b63b5643,

title = "A stepwise constant conductance approach for simulating resonant tunneling diodes",

abstract = "Current CMOS technology is reaching its scaling limits and thus the CMOS based devices are slowly being replaced by new nanotechnology devices. These nanotechnology devices, however, pose some simulation challenges due to their non-monotonic I-V characteristics and uncertain properties which lead to the negative differential resistance (NDR) problem and the chaotic performance of the simulator. This paper proposes a new circuit simulation approach that can effectively simulate nanotechnology devices, avoiding such problems. The experimental results show a 20-30 times speedup comparing with existing simulators.",

author = "Bharat Sukhwani and Wang, {Janet M.}",

year = "2005",

doi = "10.1109/ISCAS.2005.1465138",

language = "English (US)",

pages = "2518--2521",

journal = "Proceedings - IEEE International Symposium on Circuits and Systems",

issn = "0271-4310",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005 ; Conference date: 23-05-2005 Through 26-05-2005",

}

TY - JOUR

T1 - A stepwise constant conductance approach for simulating resonant tunneling diodes

AU - Sukhwani, Bharat

AU - Wang, Janet M.

PY - 2005

Y1 - 2005

N2 - Current CMOS technology is reaching its scaling limits and thus the CMOS based devices are slowly being replaced by new nanotechnology devices. These nanotechnology devices, however, pose some simulation challenges due to their non-monotonic I-V characteristics and uncertain properties which lead to the negative differential resistance (NDR) problem and the chaotic performance of the simulator. This paper proposes a new circuit simulation approach that can effectively simulate nanotechnology devices, avoiding such problems. The experimental results show a 20-30 times speedup comparing with existing simulators.

AB - Current CMOS technology is reaching its scaling limits and thus the CMOS based devices are slowly being replaced by new nanotechnology devices. These nanotechnology devices, however, pose some simulation challenges due to their non-monotonic I-V characteristics and uncertain properties which lead to the negative differential resistance (NDR) problem and the chaotic performance of the simulator. This paper proposes a new circuit simulation approach that can effectively simulate nanotechnology devices, avoiding such problems. The experimental results show a 20-30 times speedup comparing with existing simulators.

UR - http://www.scopus.com/inward/record.url?scp=67649120077&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67649120077&partnerID=8YFLogxK

U2 - 10.1109/ISCAS.2005.1465138

DO - 10.1109/ISCAS.2005.1465138

M3 - Conference article

AN - SCOPUS:67649120077

SN - 0271-4310

SP - 2518

EP - 2521

JO - Proceedings - IEEE International Symposium on Circuits and Systems

JF - Proceedings - IEEE International Symposium on Circuits and Systems

M1 - 1465138

T2 - IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005

Y2 - 23 May 2005 through 26 May 2005

ER -

A stepwise constant conductance approach for simulating resonant tunneling diodes

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this