A sono-electrochemical technique for enhanced particle removal from tantalum surfaces

R. Balachandran; P. Deymier; S. Raghavan; M. Keswani

doi:10.1149/2.008404ssl

A sono-electrochemical technique for enhanced particle removal from tantalum surfaces

R. Balachandran, P. Deymier, S. Raghavan, M. Keswani

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Low power megasonics is of interest to semiconductor cleaning community due to minimal feature damage. In this work, megasonic field at low power density in conjunction with electrochemistry is used for enhanced removal of silica particles from tantalum wafers. Cleaning studies were conducted in air or argon saturated aqueous solutions at 0.5W/cm² in the absence and presence of applied potentials of -1.5 V or -2.0 V to tantalum (vs Ag/AgCl). The improvement in particle removal efficiency is attributed to oscillating hydrogen bubbles formed from water reduction in vicinity of tantalum surface and grown to a resonant size under suitable acoustic conditions.

Original language	English (US)
Pages (from-to)	P49-P52
Journal	ECS Solid State Letters
Volume	3
Issue number	5
DOIs	https://doi.org/10.1149/2.008404ssl
State	Published - 2014

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{21cd3b60e5e8431387026e0de79ebfcc,

title = "A sono-electrochemical technique for enhanced particle removal from tantalum surfaces",

abstract = "Low power megasonics is of interest to semiconductor cleaning community due to minimal feature damage. In this work, megasonic field at low power density in conjunction with electrochemistry is used for enhanced removal of silica particles from tantalum wafers. Cleaning studies were conducted in air or argon saturated aqueous solutions at 0.5W/cm2 in the absence and presence of applied potentials of -1.5 V or -2.0 V to tantalum (vs Ag/AgCl). The improvement in particle removal efficiency is attributed to oscillating hydrogen bubbles formed from water reduction in vicinity of tantalum surface and grown to a resonant size under suitable acoustic conditions.",

author = "R. Balachandran and P. Deymier and S. Raghavan and M. Keswani",

year = "2014",

doi = "10.1149/2.008404ssl",

language = "English (US)",

volume = "3",

pages = "P49--P52",

journal = "ECS Solid State Letters",

issn = "2162-8742",

publisher = "The Electrochemical Society",

number = "5",

}

TY - JOUR

T1 - A sono-electrochemical technique for enhanced particle removal from tantalum surfaces

AU - Balachandran, R.

AU - Deymier, P.

AU - Raghavan, S.

AU - Keswani, M.

PY - 2014

Y1 - 2014

N2 - Low power megasonics is of interest to semiconductor cleaning community due to minimal feature damage. In this work, megasonic field at low power density in conjunction with electrochemistry is used for enhanced removal of silica particles from tantalum wafers. Cleaning studies were conducted in air or argon saturated aqueous solutions at 0.5W/cm2 in the absence and presence of applied potentials of -1.5 V or -2.0 V to tantalum (vs Ag/AgCl). The improvement in particle removal efficiency is attributed to oscillating hydrogen bubbles formed from water reduction in vicinity of tantalum surface and grown to a resonant size under suitable acoustic conditions.

AB - Low power megasonics is of interest to semiconductor cleaning community due to minimal feature damage. In this work, megasonic field at low power density in conjunction with electrochemistry is used for enhanced removal of silica particles from tantalum wafers. Cleaning studies were conducted in air or argon saturated aqueous solutions at 0.5W/cm2 in the absence and presence of applied potentials of -1.5 V or -2.0 V to tantalum (vs Ag/AgCl). The improvement in particle removal efficiency is attributed to oscillating hydrogen bubbles formed from water reduction in vicinity of tantalum surface and grown to a resonant size under suitable acoustic conditions.

UR - http://www.scopus.com/inward/record.url?scp=84897775541&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84897775541&partnerID=8YFLogxK

U2 - 10.1149/2.008404ssl

DO - 10.1149/2.008404ssl

M3 - Article

AN - SCOPUS:84897775541

VL - 3

SP - P49-P52

JO - ECS Solid State Letters

JF - ECS Solid State Letters

SN - 2162-8742

IS - 5

ER -

A sono-electrochemical technique for enhanced particle removal from tantalum surfaces

Abstract

ASJC Scopus subject areas

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