A new modified HF-last cleaning process for high-performance gate dielectrics

S. Verhaverbekc; M. Meuris; M. Schaekers; L. Haspeslagh; P. Mertens; M. M. Heyns; R. De Blank; A. Philipossian

doi:10.1109/VLSIT.1992.200625

A new modified HF-last cleaning process for high-performance gate dielectrics

S. Verhaverbekc, M. Meuris, M. Schaekers, L. Haspeslagh, P. Mertens, M. M. Heyns, R. De Blank, A. Philipossian

Chemical and Environmental Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

We have formulated a new cleaning mixture which consists of HF with minute amounts of IPA added. This solution prevents the panicle addition to the Si surface and does not change the chemical state of the surface significantly. The characteristics of a thin gate oxide grown after this treatment show a markedly improved performance over the standard HF- last or RCA-cleaned samples.

Original language	English (US)
Title of host publication	1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	22-23
Number of pages	2
ISBN (Electronic)	0780306988
DOIs	https://doi.org/10.1109/VLSIT.1992.200625
State	Published - 1992
Event	1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992 - Seattle, United States Duration: Jun 2 1992 → Jun 4 1992

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	1992-June
ISSN (Print)	0743-1562

Conference

Conference	1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992
Country/Territory	United States
City	Seattle
Period	6/2/92 → 6/4/92

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/VLSIT.1992.200625

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Verhaverbekc, S., Meuris, M., Schaekers, M., Haspeslagh, L., Mertens, P., Heyns, M. M., De Blank, R., & Philipossian, A. (1992). A new modified HF-last cleaning process for high-performance gate dielectrics. In 1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992 (pp. 22-23). Article 200625 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 1992-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.1992.200625

A new modified HF-last cleaning process for high-performance gate dielectrics. / Verhaverbekc, S.; Meuris, M.; Schaekers, M. et al.
1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992. Institute of Electrical and Electronics Engineers Inc., 1992. p. 22-23 200625 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 1992-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Verhaverbekc, S, Meuris, M, Schaekers, M, Haspeslagh, L, Mertens, P, Heyns, MM, De Blank, R & Philipossian, A 1992, A new modified HF-last cleaning process for high-performance gate dielectrics. in 1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992., 200625, Digest of Technical Papers - Symposium on VLSI Technology, vol. 1992-June, Institute of Electrical and Electronics Engineers Inc., pp. 22-23, 1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992, Seattle, United States, 6/2/92. https://doi.org/10.1109/VLSIT.1992.200625

Verhaverbekc S, Meuris M, Schaekers M, Haspeslagh L, Mertens P, Heyns MM et al. A new modified HF-last cleaning process for high-performance gate dielectrics. In 1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992. Institute of Electrical and Electronics Engineers Inc. 1992. p. 22-23. 200625. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSIT.1992.200625

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author = "S. Verhaverbekc and M. Meuris and M. Schaekers and L. Haspeslagh and P. Mertens and Heyns, {M. M.} and {De Blank}, R. and A. Philipossian",

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A new modified HF-last cleaning process for high-performance gate dielectrics

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