A method for direct measurement of substrate temperature during copper CMP

Yasa A. Sampurno; Leonard Borucki; Yun Zhuang; Duane Boning; Ara Philipossian

doi:10.1149/1.1925070

A method for direct measurement of substrate temperature during copper CMP

Yasa A. Sampurno, Leonard Borucki, Yun Zhuang, Duane Boning, Ara Philipossian

Chemical and Environmental Engineering

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

A novel method was developed to directly measure the substrate temperature during copper chemical mechanical planarization (CMP). Using specially designed wafer carriers, substrate temperatures were obtained in real-time with an infrared camera. Results indicate that substrate temperatures are higher than pad temperatures. In addition, the substrate temperature distribution appears to be closely related to slurry flow beneath the substrate during polishing. A three-dimensional thermal model was also developed to simulate the pad and wafer temperatures. Simulations support the interpretation of the experimental data.

Original language	English (US)
Pages (from-to)	G537-G541
Journal	Journal of the Electrochemical Society
Volume	152
Issue number	7
DOIs	https://doi.org/10.1149/1.1925070
State	Published - 2005

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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abstract = "A novel method was developed to directly measure the substrate temperature during copper chemical mechanical planarization (CMP). Using specially designed wafer carriers, substrate temperatures were obtained in real-time with an infrared camera. Results indicate that substrate temperatures are higher than pad temperatures. In addition, the substrate temperature distribution appears to be closely related to slurry flow beneath the substrate during polishing. A three-dimensional thermal model was also developed to simulate the pad and wafer temperatures. Simulations support the interpretation of the experimental data.",

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AU - Zhuang, Yun

AU - Boning, Duane

AU - Philipossian, Ara

PY - 2005

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AB - A novel method was developed to directly measure the substrate temperature during copper chemical mechanical planarization (CMP). Using specially designed wafer carriers, substrate temperatures were obtained in real-time with an infrared camera. Results indicate that substrate temperatures are higher than pad temperatures. In addition, the substrate temperature distribution appears to be closely related to slurry flow beneath the substrate during polishing. A three-dimensional thermal model was also developed to simulate the pad and wafer temperatures. Simulations support the interpretation of the experimental data.

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A method for direct measurement of substrate temperature during copper CMP

Abstract

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