TY - GEN
T1 - A high-selectivity native oxide removal process for native oxide free processes
AU - Verhaverbeke, S.
AU - Iacovacci, M.
AU - Mertens, P.
AU - Meuris, M.
AU - Heyns, M.
AU - Schreutelkamp, R.
AU - Maex, K.
AU - Alay, J.
AU - Vandervorst, W.
AU - De Blank, R.
AU - Kubota, M.
AU - Philipossian, A.
N1 - Publisher Copyright:
© 1992 IEEE.
PY - 1992
Y1 - 1992
N2 - In this work, the removal of native oxide on monocrystalline Si and poly-Si was investigated. It was found that by reducing the concentration of the HF solution, the loss of thermal oxide and TEOS can be reduced almost to thicknesses which are equivalent to the native oxide thickness which has to be removed. To accelerate the reaction, higher temperatures can be used. In the case of poly-Si, it was found that the etching of the last monolayer of the native oxide is much slower than for monocrystalline Si. In the poly-Si case, this can be easily accelerated by the use of higher temperatures.
AB - In this work, the removal of native oxide on monocrystalline Si and poly-Si was investigated. It was found that by reducing the concentration of the HF solution, the loss of thermal oxide and TEOS can be reduced almost to thicknesses which are equivalent to the native oxide thickness which has to be removed. To accelerate the reaction, higher temperatures can be used. In the case of poly-Si, it was found that the etching of the last monolayer of the native oxide is much slower than for monocrystalline Si. In the poly-Si case, this can be easily accelerated by the use of higher temperatures.
UR - http://www.scopus.com/inward/record.url?scp=84921239372&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84921239372&partnerID=8YFLogxK
U2 - 10.1109/IEDM.1992.307441
DO - 10.1109/IEDM.1992.307441
M3 - Conference contribution
AN - SCOPUS:84921239372
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 637
EP - 640
BT - 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Y2 - 13 December 1992 through 16 December 1992
ER -