A high-selectivity native oxide removal process for native oxide free processes

S. Verhaverbeke; M. Iacovacci; P. Mertens; M. Meuris; M. Heyns; R. Schreutelkamp; K. Maex; J. Alay; W. Vandervorst; R. De Blank; M. Kubota; A. Philipossian

doi:10.1109/IEDM.1992.307441

A high-selectivity native oxide removal process for native oxide free processes

S. Verhaverbeke, M. Iacovacci, P. Mertens, M. Meuris, M. Heyns, R. Schreutelkamp, K. Maex, J. Alay, W. Vandervorst, R. De Blank, M. Kubota, A. Philipossian

Chemical and Environmental Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

In this work, the removal of native oxide on monocrystalline Si and poly-Si was investigated. It was found that by reducing the concentration of the HF solution, the loss of thermal oxide and TEOS can be reduced almost to thicknesses which are equivalent to the native oxide thickness which has to be removed. To accelerate the reaction, higher temperatures can be used. In the case of poly-Si, it was found that the etching of the last monolayer of the native oxide is much slower than for monocrystalline Si. In the poly-Si case, this can be easily accelerated by the use of higher temperatures.

Original language	English (US)
Title of host publication	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	637-640
Number of pages	4
ISBN (Electronic)	0780308174
DOIs	https://doi.org/10.1109/IEDM.1992.307441
State	Published - 1992
Event	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States Duration: Dec 13 1992 → Dec 16 1992

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	1992-December
ISSN (Print)	0163-1918

Conference

Conference	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Country/Territory	United States
City	San Francisco
Period	12/13/92 → 12/16/92

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.1992.307441

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Verhaverbeke, S., Iacovacci, M., Mertens, P., Meuris, M., Heyns, M., Schreutelkamp, R., Maex, K., Alay, J., Vandervorst, W., De Blank, R., Kubota, M., & Philipossian, A. (1992). A high-selectivity native oxide removal process for native oxide free processes. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 (pp. 637-640). Article 307441 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1992.307441

A high-selectivity native oxide removal process for native oxide free processes. / Verhaverbeke, S.; Iacovacci, M.; Mertens, P. et al.
1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc., 1992. p. 637-640 307441 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Verhaverbeke, S, Iacovacci, M, Mertens, P, Meuris, M, Heyns, M, Schreutelkamp, R, Maex, K, Alay, J, Vandervorst, W, De Blank, R, Kubota, M & Philipossian, A 1992, A high-selectivity native oxide removal process for native oxide free processes. in 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992., 307441, Technical Digest - International Electron Devices Meeting, IEDM, vol. 1992-December, Institute of Electrical and Electronics Engineers Inc., pp. 637-640, 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992, San Francisco, United States, 12/13/92. https://doi.org/10.1109/IEDM.1992.307441

Verhaverbeke S, Iacovacci M, Mertens P, Meuris M, Heyns M, Schreutelkamp R et al. A high-selectivity native oxide removal process for native oxide free processes. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc. 1992. p. 637-640. 307441. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.1992.307441

@inproceedings{fc5ffe7f270e49ac9200c6b0845e9be9,

title = "A high-selectivity native oxide removal process for native oxide free processes",

abstract = "In this work, the removal of native oxide on monocrystalline Si and poly-Si was investigated. It was found that by reducing the concentration of the HF solution, the loss of thermal oxide and TEOS can be reduced almost to thicknesses which are equivalent to the native oxide thickness which has to be removed. To accelerate the reaction, higher temperatures can be used. In the case of poly-Si, it was found that the etching of the last monolayer of the native oxide is much slower than for monocrystalline Si. In the poly-Si case, this can be easily accelerated by the use of higher temperatures.",

author = "S. Verhaverbeke and M. Iacovacci and P. Mertens and M. Meuris and M. Heyns and R. Schreutelkamp and K. Maex and J. Alay and W. Vandervorst and {De Blank}, R. and M. Kubota and A. Philipossian",

note = "Publisher Copyright: {\textcopyright} 1992 IEEE.; 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 ; Conference date: 13-12-1992 Through 16-12-1992",

year = "1992",

doi = "10.1109/IEDM.1992.307441",

language = "English (US)",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "637--640",

booktitle = "1992 International Technical Digest on Electron Devices Meeting, IEDM 1992",

}

TY - GEN

T1 - A high-selectivity native oxide removal process for native oxide free processes

AU - Verhaverbeke, S.

AU - Iacovacci, M.

AU - Mertens, P.

AU - Meuris, M.

AU - Heyns, M.

AU - Schreutelkamp, R.

AU - Maex, K.

AU - Alay, J.

AU - Vandervorst, W.

AU - De Blank, R.

AU - Kubota, M.

AU - Philipossian, A.

PY - 1992

Y1 - 1992

N2 - In this work, the removal of native oxide on monocrystalline Si and poly-Si was investigated. It was found that by reducing the concentration of the HF solution, the loss of thermal oxide and TEOS can be reduced almost to thicknesses which are equivalent to the native oxide thickness which has to be removed. To accelerate the reaction, higher temperatures can be used. In the case of poly-Si, it was found that the etching of the last monolayer of the native oxide is much slower than for monocrystalline Si. In the poly-Si case, this can be easily accelerated by the use of higher temperatures.

AB - In this work, the removal of native oxide on monocrystalline Si and poly-Si was investigated. It was found that by reducing the concentration of the HF solution, the loss of thermal oxide and TEOS can be reduced almost to thicknesses which are equivalent to the native oxide thickness which has to be removed. To accelerate the reaction, higher temperatures can be used. In the case of poly-Si, it was found that the etching of the last monolayer of the native oxide is much slower than for monocrystalline Si. In the poly-Si case, this can be easily accelerated by the use of higher temperatures.

UR - http://www.scopus.com/inward/record.url?scp=84921239372&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84921239372&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1992.307441

DO - 10.1109/IEDM.1992.307441

M3 - Conference contribution

AN - SCOPUS:84921239372

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 637

EP - 640

BT - 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992

Y2 - 13 December 1992 through 16 December 1992

ER -

A high-selectivity native oxide removal process for native oxide free processes

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