A first-principles fully space-time resolved model of a semiconductor laser

C. Z. Ning; J. V. Moloney; A. Egan; R. A. Indik

doi:10.1088/1355-5111/9/5/004

A first-principles fully space-time resolved model of a semiconductor laser

C. Z. Ning, J. V. Moloney, A. Egan, R. A. Indik

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We present a semiconductor laser model which incorporates the gain bandwidth and nonlinear gain by using the multi-band microscopic theory of an electron-hole plasma in a semiconductor quantum-well medium. The approach is extremely robust, allowing us to take into account important many-body effects, as well as material and structural parameters of a given laser device. As a specific illustrative example, we resolve for the first time, the full multi-longitudinal mode and transverse filamentation instabilities of a master-oscillator power amplifier (MOPA) device.

Original language	English (US)
Pages (from-to)	681-691
Number of pages	11
Journal	Journal of Optics B: Quantum and Semiclassical Optics
Volume	9
Issue number	5
DOIs	https://doi.org/10.1088/1355-5111/9/5/004
State	Published - Oct 1997

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Physics and Astronomy (miscellaneous)

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10.1088/1355-5111/9/5/004

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abstract = "We present a semiconductor laser model which incorporates the gain bandwidth and nonlinear gain by using the multi-band microscopic theory of an electron-hole plasma in a semiconductor quantum-well medium. The approach is extremely robust, allowing us to take into account important many-body effects, as well as material and structural parameters of a given laser device. As a specific illustrative example, we resolve for the first time, the full multi-longitudinal mode and transverse filamentation instabilities of a master-oscillator power amplifier (MOPA) device.",

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AU - Egan, A.

AU - Indik, R. A.

PY - 1997/10

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N2 - We present a semiconductor laser model which incorporates the gain bandwidth and nonlinear gain by using the multi-band microscopic theory of an electron-hole plasma in a semiconductor quantum-well medium. The approach is extremely robust, allowing us to take into account important many-body effects, as well as material and structural parameters of a given laser device. As a specific illustrative example, we resolve for the first time, the full multi-longitudinal mode and transverse filamentation instabilities of a master-oscillator power amplifier (MOPA) device.

AB - We present a semiconductor laser model which incorporates the gain bandwidth and nonlinear gain by using the multi-band microscopic theory of an electron-hole plasma in a semiconductor quantum-well medium. The approach is extremely robust, allowing us to take into account important many-body effects, as well as material and structural parameters of a given laser device. As a specific illustrative example, we resolve for the first time, the full multi-longitudinal mode and transverse filamentation instabilities of a master-oscillator power amplifier (MOPA) device.

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A first-principles fully space-time resolved model of a semiconductor laser

Abstract

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