Abstract
We present a semiconductor laser model which incorporates the gain bandwidth and nonlinear gain by using the multi-band microscopic theory of an electron-hole plasma in a semiconductor quantum-well medium. The approach is extremely robust, allowing us to take into account important many-body effects, as well as material and structural parameters of a given laser device. As a specific illustrative example, we resolve for the first time, the full multi-longitudinal mode and transverse filamentation instabilities of a master-oscillator power amplifier (MOPA) device.
Original language | English (US) |
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Pages (from-to) | 681-691 |
Number of pages | 11 |
Journal | Journal of Optics B: Quantum and Semiclassical Optics |
Volume | 9 |
Issue number | 5 |
DOIs | |
State | Published - Oct 1997 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy (miscellaneous)