A backside-illuminated image sensor with 200000 pixels operating at 250000 frames per second

Cuong Vo Le; T. Goji Etoh; H. D. Nguyen; V. T.S. Dao; H. Soya; Michael Lesser; David Ouellette; H. van Kuijk; J. Bosiers; G. Ingram

doi:10.1109/TED.2009.2030601

A backside-illuminated image sensor with 200000 pixels operating at 250000 frames per second

Cuong Vo Le
, T. Goji Etoh
, H. D. Nguyen
, V. T.S. Dao
, H. Soya
, Michael Lesser
, David Ouellette
, H. van Kuijk
, J. Bosiers
, G. Ingram

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

In this paper, a high-speed image sensor with very high sensitivity is developed. The high sensitivity is achieved by introduction of backside illumination and charge-carrier multiplication (CCM). The high frame rate is guaranteed by installing the in situ storage image sensor (ISIS) structure on the front side. A test sensor of the BSI-ISIS has been developed and evaluated. It is shown that an image with a very low signal level embedded under the noise floor is recognizable by activating the CCM.

Original language	English (US)
Pages (from-to)	2556-2562
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	56
Issue number	11
DOIs	https://doi.org/10.1109/TED.2009.2030601
State	Published - 2009

Keywords

Charge-carrier multiplication (CCM)
High sensitivity
High speed
In situ storage image sensor (ISIS)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2009.2030601

Cite this

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title = "A backside-illuminated image sensor with 200000 pixels operating at 250000 frames per second",

abstract = "In this paper, a high-speed image sensor with very high sensitivity is developed. The high sensitivity is achieved by introduction of backside illumination and charge-carrier multiplication (CCM). The high frame rate is guaranteed by installing the in situ storage image sensor (ISIS) structure on the front side. A test sensor of the BSI-ISIS has been developed and evaluated. It is shown that an image with a very low signal level embedded under the noise floor is recognizable by activating the CCM.",

keywords = "Charge-carrier multiplication (CCM), High sensitivity, High speed, In situ storage image sensor (ISIS)",

author = "\{Vo Le\}, Cuong and Etoh, \{T. Goji\} and Nguyen, \{H. D.\} and Dao, \{V. T.S.\} and H. Soya and Michael Lesser and David Ouellette and \{van Kuijk\}, H. and J. Bosiers and G. Ingram",

note = "Funding Information: Manuscript received January 6, 2009; revised May 27, 2009. First published September 29, 2009; current version published October 21, 2009. This work was supported by the Development of Systems and Technology for Advanced Measurement and Analysis, Japan Science and Technology Agency (JST-SENTAN). The review of this paper was arranged by Editor N. Teranishi. C. Vo Le, T. G. Etoh, H. D. Nguyen, and V. T. S. Dao are with Kinki University, Higashi-Osaka 577-8502, Japan. H. Soya is with Shimadzu Corporation, Kyoto 604-8511, Japan. M. Lesser and D. Ouellette are with the University of Arizona, Tucson, AZ 85721 USA. H. van Kuijk and J. Bosiers are with DALSA Professional Imaging, 5656 AE Eindhoven, The Netherlands. G. Ingram is with DALSA Digital Imaging, Waterloo, ON N2V 2E9, Canada. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TED.2009.2030601",

year = "2009",

doi = "10.1109/TED.2009.2030601",

language = "English (US)",

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journal = "IEEE Transactions on Electron Devices",

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AU - Vo Le, Cuong

AU - Etoh, T. Goji

AU - Nguyen, H. D.

AU - Dao, V. T.S.

AU - Soya, H.

AU - Lesser, Michael

AU - Ouellette, David

AU - van Kuijk, H.

AU - Bosiers, J.

AU - Ingram, G.

N1 - Funding Information: Manuscript received January 6, 2009; revised May 27, 2009. First published September 29, 2009; current version published October 21, 2009. This work was supported by the Development of Systems and Technology for Advanced Measurement and Analysis, Japan Science and Technology Agency (JST-SENTAN). The review of this paper was arranged by Editor N. Teranishi. C. Vo Le, T. G. Etoh, H. D. Nguyen, and V. T. S. Dao are with Kinki University, Higashi-Osaka 577-8502, Japan. H. Soya is with Shimadzu Corporation, Kyoto 604-8511, Japan. M. Lesser and D. Ouellette are with the University of Arizona, Tucson, AZ 85721 USA. H. van Kuijk and J. Bosiers are with DALSA Professional Imaging, 5656 AE Eindhoven, The Netherlands. G. Ingram is with DALSA Digital Imaging, Waterloo, ON N2V 2E9, Canada. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TED.2009.2030601

PY - 2009

Y1 - 2009

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KW - High sensitivity

KW - High speed

KW - In situ storage image sensor (ISIS)

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A backside-illuminated image sensor with 200000 pixels operating at 250000 frames per second

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Keywords

ASJC Scopus subject areas

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