@article{d59840ee7e6540d4b36338b89a49f499,
title = "A backside-illuminated image sensor with 200000 pixels operating at 250000 frames per second",
abstract = "In this paper, a high-speed image sensor with very high sensitivity is developed. The high sensitivity is achieved by introduction of backside illumination and charge-carrier multiplication (CCM). The high frame rate is guaranteed by installing the in situ storage image sensor (ISIS) structure on the front side. A test sensor of the BSI-ISIS has been developed and evaluated. It is shown that an image with a very low signal level embedded under the noise floor is recognizable by activating the CCM.",
keywords = "Charge-carrier multiplication (CCM), High sensitivity, High speed, In situ storage image sensor (ISIS)",
author = "\{Vo Le\}, Cuong and Etoh, \{T. Goji\} and Nguyen, \{H. D.\} and Dao, \{V. T.S.\} and H. Soya and Michael Lesser and David Ouellette and \{van Kuijk\}, H. and J. Bosiers and G. Ingram",
note = "Funding Information: Manuscript received January 6, 2009; revised May 27, 2009. First published September 29, 2009; current version published October 21, 2009. This work was supported by the Development of Systems and Technology for Advanced Measurement and Analysis, Japan Science and Technology Agency (JST-SENTAN). The review of this paper was arranged by Editor N. Teranishi. C. Vo Le, T. G. Etoh, H. D. Nguyen, and V. T. S. Dao are with Kinki University, Higashi-Osaka 577-8502, Japan. H. Soya is with Shimadzu Corporation, Kyoto 604-8511, Japan. M. Lesser and D. Ouellette are with the University of Arizona, Tucson, AZ 85721 USA. H. van Kuijk and J. Bosiers are with DALSA Professional Imaging, 5656 AE Eindhoven, The Netherlands. G. Ingram is with DALSA Digital Imaging, Waterloo, ON N2V 2E9, Canada. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TED.2009.2030601",
year = "2009",
doi = "10.1109/TED.2009.2030601",
language = "English (US)",
volume = "56",
pages = "2556--2562",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}