8-GHZ BANDWIDTH 1. 52- mu M VAPOR PHASE TRANSPORTED INGAASP LASERS.

J. E. Bowers; T. L. Koch; B. R. Hemenway; T. J. Bridges; E. G. Burkhardt; D. P. Wilt

8-GHZ BANDWIDTH 1. 52- mu M VAPOR PHASE TRANSPORTED INGAASP LASERS.

J. E. Bowers, T. L. Koch, B. R. Hemenway, T. J. Bridges, E. G. Burkhardt, D. P. Wilt

Research output: Contribution to conference › Paper › peer-review

Abstract

Summary form only given. Modifications and results are described on vapor phase transported InGaAsP lasers which increase the small-signal modulation bandwidth from previous typical values of 3 GHz to as high as 8 GHz. An InGaAsP double-heterostructure wafer grown by liquid phase epitaxy is etched with a combination of reactive ion etching and wet chemical etching to form a mushroom-shaped structure with an active layer width of 1. 5 mu m. The transverse waveguide is formed by a vapor phase epitaxial (VPE) regrowth of a low-doped InP layer. The three major modifications described are (1) an order of magnitude reduction in the area of the bonding pad, (2) a 1- mu m thick layer of polyimide under the bonding pad to further reduce the capacitance, and (3) a reduction in the InP regrowth to limit the area of the p-n junction in the VPE InP region.

Original language	English (US)
Pages	88-90
Number of pages	3
State	Published - 1985
Externally published	Yes

ASJC Scopus subject areas

General Engineering

Cite this

@conference{fc3c9164bf4742999a86161351b7cc66,

title = "8-GHZ BANDWIDTH 1. 52- mu M VAPOR PHASE TRANSPORTED INGAASP LASERS.",

abstract = "Summary form only given. Modifications and results are described on vapor phase transported InGaAsP lasers which increase the small-signal modulation bandwidth from previous typical values of 3 GHz to as high as 8 GHz. An InGaAsP double-heterostructure wafer grown by liquid phase epitaxy is etched with a combination of reactive ion etching and wet chemical etching to form a mushroom-shaped structure with an active layer width of 1. 5 mu m. The transverse waveguide is formed by a vapor phase epitaxial (VPE) regrowth of a low-doped InP layer. The three major modifications described are (1) an order of magnitude reduction in the area of the bonding pad, (2) a 1- mu m thick layer of polyimide under the bonding pad to further reduce the capacitance, and (3) a reduction in the InP regrowth to limit the area of the p-n junction in the VPE InP region.",

author = "Bowers, {J. E.} and Koch, {T. L.} and Hemenway, {B. R.} and Bridges, {T. J.} and Burkhardt, {E. G.} and Wilt, {D. P.}",

year = "1985",

language = "English (US)",

pages = "88--90",

}

TY - CONF

T1 - 8-GHZ BANDWIDTH 1. 52- mu M VAPOR PHASE TRANSPORTED INGAASP LASERS.

AU - Bowers, J. E.

AU - Koch, T. L.

AU - Hemenway, B. R.

AU - Bridges, T. J.

AU - Burkhardt, E. G.

AU - Wilt, D. P.

PY - 1985

Y1 - 1985

N2 - Summary form only given. Modifications and results are described on vapor phase transported InGaAsP lasers which increase the small-signal modulation bandwidth from previous typical values of 3 GHz to as high as 8 GHz. An InGaAsP double-heterostructure wafer grown by liquid phase epitaxy is etched with a combination of reactive ion etching and wet chemical etching to form a mushroom-shaped structure with an active layer width of 1. 5 mu m. The transverse waveguide is formed by a vapor phase epitaxial (VPE) regrowth of a low-doped InP layer. The three major modifications described are (1) an order of magnitude reduction in the area of the bonding pad, (2) a 1- mu m thick layer of polyimide under the bonding pad to further reduce the capacitance, and (3) a reduction in the InP regrowth to limit the area of the p-n junction in the VPE InP region.

AB - Summary form only given. Modifications and results are described on vapor phase transported InGaAsP lasers which increase the small-signal modulation bandwidth from previous typical values of 3 GHz to as high as 8 GHz. An InGaAsP double-heterostructure wafer grown by liquid phase epitaxy is etched with a combination of reactive ion etching and wet chemical etching to form a mushroom-shaped structure with an active layer width of 1. 5 mu m. The transverse waveguide is formed by a vapor phase epitaxial (VPE) regrowth of a low-doped InP layer. The three major modifications described are (1) an order of magnitude reduction in the area of the bonding pad, (2) a 1- mu m thick layer of polyimide under the bonding pad to further reduce the capacitance, and (3) a reduction in the InP regrowth to limit the area of the p-n junction in the VPE InP region.

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M3 - Paper

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EP - 90

ER -

8-GHZ BANDWIDTH 1. 52- mu M VAPOR PHASE TRANSPORTED INGAASP LASERS.

Abstract

ASJC Scopus subject areas

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