Abstract
We report active mode locking in a monolithic long-cavity semiconductor laser, operating at 1.5 μm wavelength. Pulses with durations of 4ps at repetition rates up to 40 GHz have been achieved, with a modulation depth of 97%. This is the first report of active mode locking in a monolithic device, and the highest repetition rate achieved with an actively mode locked laser.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 621-622 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 25 |
| Issue number | 10 |
| DOIs | |
| State | Published - 1989 |
| Externally published | Yes |
Keywords
- Modulation
- Semiconductor lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering