@article{6dff482a178d4600b89d087ffd59cfd7,
title = "340-W peak power from a GaSb 2-μm optically pumped semiconductor laser (OPSL) grown mismatched on GaAs",
abstract = "A GaSb-based vertical external cavity laser at 2 μm was pumped by 100- to 160-ns pulses from a Nd:YAG laser at 1.064 μm operating at 1 kHz. It was shown that the output power scales with the pump spot diameter to the extent of our experiments. A peak output of over 340 W was obtained.",
keywords = "Gallium arsenide, laser cavity resonators, optical pumping, semiconductor lasers",
author = "Lai, \{Yi Ying\} and Yarborough, \{J. M.\} and Yushi Kaneda and J{\"o}rg Hader and Moloney, \{Jerome V.\} and Rotter, \{T. J.\} and G. Balakrishnan and C. Hains and Koch, \{S. W.\}",
note = "Funding Information: Manuscript received March 29, 2010; revised May 22, 2010; accepted May 29, 2010. Date of current version July 23, 2010. This work was supported by a U.S. Joint Technology Office Multidisciplinary Research Initiative Program Grant AFOSR FA9550-07-1-0573. Y.-Y. Lai, J. M. Yarborough, Y. Kaneda, and J. V. Moloney are with the College of Optical Sciences, University of Arizona, Tucson, AZ 85721 USA. J. Hader is with Nonlinear Control Strategies Inc., Tucson, AZ 85705 USA. T. J. Rotter, G. Balakrishnan, and C. Hains are with the Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106 USA. S. W. Koch is with Material Science Center and Department of Physics, Philips Universit{\"a}t Marburg, 35032 Marburg, Germany. Digital Object Identifier 10.1109/LPT.2010.2052596 Fig. 1. Experimentally measured (thin lines, circles) and microscopically calculated (bold lines) surface-PL spectra at a fixed, low pump power for three temperatures.",
year = "2010",
doi = "10.1109/LPT.2010.2052596",
language = "English (US)",
volume = "22",
pages = "1253--1255",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "16",
}