3-5 μm lasers employing GaInSb/InAs superlattice active layers

Alan R. Kost; L. West; Richard H. Miles; Tom C. Hasenberg

doi:10.1117/12.273801

3-5 μm lasers employing GaInSb/InAs superlattice active layers

Alan R. Kost, L. West, Richard H. Miles, Tom C. Hasenberg

Research output: Contribution to journal › Conference article › peer-review

Abstract

We demonstrate midwave infrared diode lasers than span the 3-4 micrometers range. Laser active regions are multiple quantum well structures with GaInSb/InAs, type-II, broken gap superlattices for the wells and GaInAsSb for the barriers. The superlattice constituents and dimensions were tailored to reduce losses from Auger recombination. AlSb/InAs superlattices are used for both n-type and p-type laser cladding regions. A device with emission at 3.2 micrometers lased up to 255 K. We have achieved 75 mW per facet at 3.0 micrometers at an operating temperature of 140 K with an 85 microsecond(s) ec input current pulse. Device output appears to be limited by resistive heating. A four-layer, strain-balanced superlattice design offers greater laser efficiency.

Original language	English (US)
Pages (from-to)	321-329
Number of pages	9
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3001
DOIs	https://doi.org/10.1117/12.273801
State	Published - 1997
Externally published	Yes
Event	In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared - San Jose, CA, United States Duration: Feb 10 1997 → Feb 10 1997

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.273801

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title = "3-5 μm lasers employing GaInSb/InAs superlattice active layers",

abstract = "We demonstrate midwave infrared diode lasers than span the 3-4 micrometers range. Laser active regions are multiple quantum well structures with GaInSb/InAs, type-II, broken gap superlattices for the wells and GaInAsSb for the barriers. The superlattice constituents and dimensions were tailored to reduce losses from Auger recombination. AlSb/InAs superlattices are used for both n-type and p-type laser cladding regions. A device with emission at 3.2 micrometers lased up to 255 K. We have achieved 75 mW per facet at 3.0 micrometers at an operating temperature of 140 K with an 85 microsecond(s) ec input current pulse. Device output appears to be limited by resistive heating. A four-layer, strain-balanced superlattice design offers greater laser efficiency.",

author = "Kost, {Alan R.} and L. West and Miles, {Richard H.} and Hasenberg, {Tom C.}",

year = "1997",

doi = "10.1117/12.273801",

language = "English (US)",

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pages = "321--329",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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publisher = "SPIE",

note = "In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared ; Conference date: 10-02-1997 Through 10-02-1997",

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TY - JOUR

T1 - 3-5 μm lasers employing GaInSb/InAs superlattice active layers

AU - Kost, Alan R.

AU - West, L.

AU - Miles, Richard H.

AU - Hasenberg, Tom C.

PY - 1997

Y1 - 1997

N2 - We demonstrate midwave infrared diode lasers than span the 3-4 micrometers range. Laser active regions are multiple quantum well structures with GaInSb/InAs, type-II, broken gap superlattices for the wells and GaInAsSb for the barriers. The superlattice constituents and dimensions were tailored to reduce losses from Auger recombination. AlSb/InAs superlattices are used for both n-type and p-type laser cladding regions. A device with emission at 3.2 micrometers lased up to 255 K. We have achieved 75 mW per facet at 3.0 micrometers at an operating temperature of 140 K with an 85 microsecond(s) ec input current pulse. Device output appears to be limited by resistive heating. A four-layer, strain-balanced superlattice design offers greater laser efficiency.

AB - We demonstrate midwave infrared diode lasers than span the 3-4 micrometers range. Laser active regions are multiple quantum well structures with GaInSb/InAs, type-II, broken gap superlattices for the wells and GaInAsSb for the barriers. The superlattice constituents and dimensions were tailored to reduce losses from Auger recombination. AlSb/InAs superlattices are used for both n-type and p-type laser cladding regions. A device with emission at 3.2 micrometers lased up to 255 K. We have achieved 75 mW per facet at 3.0 micrometers at an operating temperature of 140 K with an 85 microsecond(s) ec input current pulse. Device output appears to be limited by resistive heating. A four-layer, strain-balanced superlattice design offers greater laser efficiency.

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DO - 10.1117/12.273801

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VL - 3001

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EP - 329

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared

Y2 - 10 February 1997 through 10 February 1997

ER -

3-5 μm lasers employing GaInSb/InAs superlattice active layers

Abstract

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