1.5 μm monolithic shallow-groove coupled-cavity vapour phase transported buried heterostructure lasers

T. L. Koch; L. A. Coldren; T. J. Bridges; E. G. Burkhardt; P. J. Corvini; D. P. Wilt

doi:10.1049/el:19840681

1.5 μm monolithic shallow-groove coupled-cavity vapour phase transported buried heterostructure lasers

T. L. Koch
, L. A. Coldren
, T. J. Bridges
, E. G. Burkhardt
, P. J. Corvini
, D. P. Wilt

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We demonstrate a new low-threshold 1.5 μm singlewavelength InGaAsP laser. Frequency selectivity is achieved by a simple photolithographically defined groove discontinuity involving no additional processing. Side mode suppressions as high as 26 dB have been achieved with typical thresholds of 35 mA.

Original language	English (US)
Pages (from-to)	1001-1002
Number of pages	2
Journal	Electronics Letters
Volume	20
Issue number	24
DOIs	https://doi.org/10.1049/el:19840681
State	Published - Nov 22 1984
Externally published	Yes

Keywords

Lasers and laser applications
Semiconductor devices and materials

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19840681

Cite this

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title = "1.5 μm monolithic shallow-groove coupled-cavity vapour phase transported buried heterostructure lasers",

abstract = "We demonstrate a new low-threshold 1.5 μm singlewavelength InGaAsP laser. Frequency selectivity is achieved by a simple photolithographically defined groove discontinuity involving no additional processing. Side mode suppressions as high as 26 dB have been achieved with typical thresholds of 35 mA.",

keywords = "Lasers and laser applications, Semiconductor devices and materials",

author = "Koch, \{T. L.\} and Coldren, \{L. A.\} and Bridges, \{T. J.\} and Burkhardt, \{E. G.\} and Corvini, \{P. J.\} and Wilt, \{D. P.\}",

year = "1984",

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doi = "10.1049/el:19840681",

language = "English (US)",

volume = "20",

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T1 - 1.5 μm monolithic shallow-groove coupled-cavity vapour phase transported buried heterostructure lasers

AU - Koch, T. L.

AU - Coldren, L. A.

AU - Bridges, T. J.

AU - Burkhardt, E. G.

AU - Corvini, P. J.

AU - Wilt, D. P.

PY - 1984/11/22

Y1 - 1984/11/22

N2 - We demonstrate a new low-threshold 1.5 μm singlewavelength InGaAsP laser. Frequency selectivity is achieved by a simple photolithographically defined groove discontinuity involving no additional processing. Side mode suppressions as high as 26 dB have been achieved with typical thresholds of 35 mA.

AB - We demonstrate a new low-threshold 1.5 μm singlewavelength InGaAsP laser. Frequency selectivity is achieved by a simple photolithographically defined groove discontinuity involving no additional processing. Side mode suppressions as high as 26 dB have been achieved with typical thresholds of 35 mA.

KW - Lasers and laser applications

KW - Semiconductor devices and materials

UR - https://www.scopus.com/pages/publications/0021519715

UR - https://www.scopus.com/pages/publications/0021519715#tab=citedBy

U2 - 10.1049/el:19840681

DO - 10.1049/el:19840681

M3 - Article

AN - SCOPUS:0021519715

SN - 0013-5194

VL - 20

SP - 1001

EP - 1002

JO - Electronics Letters

JF - Electronics Letters

IS - 24

ER -

1.5 μm monolithic shallow-groove coupled-cavity vapour phase transported buried heterostructure lasers

Abstract

Keywords

ASJC Scopus subject areas

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