Abstract
We demonstrate a new low-threshold 1.5 μm singlewavelength InGaAsP laser. Frequency selectivity is achieved by a simple photolithographically defined groove discontinuity involving no additional processing. Side mode suppressions as high as 26 dB have been achieved with typical thresholds of 35 mA.
Original language | English (US) |
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Pages (from-to) | 1001-1002 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 20 |
Issue number | 24 |
DOIs | |
State | Published - Nov 22 1984 |
Keywords
- Lasers and laser applications
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering