1.5 μm monolithic shallow-groove coupled-cavity vapour phase transported buried heterostructure lasers

T. L. Koch; L. A. Coldren; T. J. Bridges; E. G. Burkhardt; P. J. Corvini; D. P. Wilt

doi:10.1049/el:19840681

1.5 μm monolithic shallow-groove coupled-cavity vapour phase transported buried heterostructure lasers

T. L. Koch, L. A. Coldren, T. J. Bridges, E. G. Burkhardt, P. J. Corvini, D. P. Wilt

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We demonstrate a new low-threshold 1.5 μm singlewavelength InGaAsP laser. Frequency selectivity is achieved by a simple photolithographically defined groove discontinuity involving no additional processing. Side mode suppressions as high as 26 dB have been achieved with typical thresholds of 35 mA.

Original language	English (US)
Pages (from-to)	1001-1002
Number of pages	2
Journal	Electronics Letters
Volume	20
Issue number	24
DOIs	https://doi.org/10.1049/el:19840681
State	Published - Nov 22 1984

Keywords

Lasers and laser applications
Semiconductor devices and materials

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19840681

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title = "1.5 μm monolithic shallow-groove coupled-cavity vapour phase transported buried heterostructure lasers",

abstract = "We demonstrate a new low-threshold 1.5 μm singlewavelength InGaAsP laser. Frequency selectivity is achieved by a simple photolithographically defined groove discontinuity involving no additional processing. Side mode suppressions as high as 26 dB have been achieved with typical thresholds of 35 mA.",

keywords = "Lasers and laser applications, Semiconductor devices and materials",

author = "Koch, {T. L.} and Coldren, {L. A.} and Bridges, {T. J.} and Burkhardt, {E. G.} and Corvini, {P. J.} and Wilt, {D. P.}",

year = "1984",

month = nov,

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doi = "10.1049/el:19840681",

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volume = "20",

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journal = "Electronics Letters",

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T1 - 1.5 μm monolithic shallow-groove coupled-cavity vapour phase transported buried heterostructure lasers

AU - Koch, T. L.

AU - Coldren, L. A.

AU - Bridges, T. J.

AU - Burkhardt, E. G.

AU - Corvini, P. J.

AU - Wilt, D. P.

PY - 1984/11/22

Y1 - 1984/11/22

N2 - We demonstrate a new low-threshold 1.5 μm singlewavelength InGaAsP laser. Frequency selectivity is achieved by a simple photolithographically defined groove discontinuity involving no additional processing. Side mode suppressions as high as 26 dB have been achieved with typical thresholds of 35 mA.

AB - We demonstrate a new low-threshold 1.5 μm singlewavelength InGaAsP laser. Frequency selectivity is achieved by a simple photolithographically defined groove discontinuity involving no additional processing. Side mode suppressions as high as 26 dB have been achieved with typical thresholds of 35 mA.

KW - Lasers and laser applications

KW - Semiconductor devices and materials

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DO - 10.1049/el:19840681

M3 - Article

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JF - Electronics Letters

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ER -

1.5 μm monolithic shallow-groove coupled-cavity vapour phase transported buried heterostructure lasers

Abstract

Keywords

ASJC Scopus subject areas

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